Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

Abdelmajid Salhi; Yves Rouillard; Julie Angellier; Michel Garcia

doi:10.1109/LPT.2004.835623

Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

Abdelmajid Salhi^*
, Yves Rouillard
, Julie Angellier
, Michel Garcia

^*Corresponding author for this work

Université de Montpellier

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm^-1 and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm². The threshold current density per quantum well is as low as 34 A/cm² for a 3-mm-long cavity.

Original language	English
Pages (from-to)	2424-2426
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2004.835623
Publication status	Published - Nov 2004
Externally published	Yes

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title = "Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime",

abstract = "A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm-1 and a high internal quantum efficiency of 70\% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm2. The threshold current density per quantum well is as low as 34 A/cm2 for a 3-mm-long cavity.",

author = "Abdelmajid Salhi and Yves Rouillard and Julie Angellier and Michel Garcia",

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T1 - Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

AU - Salhi, Abdelmajid

AU - Rouillard, Yves

AU - Angellier, Julie

AU - Garcia, Michel

PY - 2004/11

Y1 - 2004/11

N2 - A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm-1 and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm2. The threshold current density per quantum well is as low as 34 A/cm2 for a 3-mm-long cavity.

AB - A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm-1 and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm2. The threshold current density per quantum well is as low as 34 A/cm2 for a 3-mm-long cavity.

UR - https://www.scopus.com/pages/publications/7744234987

U2 - 10.1109/LPT.2004.835623

DO - 10.1109/LPT.2004.835623

M3 - Article

AN - SCOPUS:7744234987

SN - 1041-1135

VL - 16

SP - 2424

EP - 2426

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

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