TY - GEN
T1 - Two-transistor active pixel image sensor with active diode reset
AU - Zhang, Dongwei
AU - He, Frank
AU - Bermak, Amine
AU - Chan, Mansun
PY - 2010
Y1 - 2010
N2 - A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm x 7μm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.
AB - A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm x 7μm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.
UR - https://www.scopus.com/pages/publications/78751563475
U2 - 10.1109/ICSICT.2010.5667549
DO - 10.1109/ICSICT.2010.5667549
M3 - Conference contribution
AN - SCOPUS:78751563475
SN - 9781424457984
T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 1468
EP - 1470
BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Y2 - 1 November 2010 through 4 November 2010
ER -