The influence of a continuum background on carrier relaxation in InAs/InGaAs quantum dot

Gabriele Rainò; Giuseppe Visimberga; Abdelmajid Salhi; Maria T. Todaro; Massimo De Vittorio; Adriana Passaseo; Roberto Cingolani; Milena De Giorgi

doi:10.1007/s11671-007-9092-2

The influence of a continuum background on carrier relaxation in InAs/InGaAs quantum dot

Gabriele Rainò^*
, Giuseppe Visimberga
, Abdelmajid Salhi
, Maria T. Todaro
, Massimo De Vittorio
, Adriana Passaseo
, Roberto Cingolani
, Milena De Giorgi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

Original language	English
Pages (from-to)	509-511
Number of pages	3
Journal	Nanoscale Research Letters
Volume	2
Issue number	10
DOIs	https://doi.org/10.1007/s11671-007-9092-2
Publication status	Published - Oct 2007
Externally published	Yes

Keywords

Carrier relaxation
Quantum dots
Ultra fast spectroscopy

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10.1007/s11671-007-9092-2

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title = "The influence of a continuum background on carrier relaxation in InAs/InGaAs quantum dot",

abstract = "We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.",

keywords = "Carrier relaxation, Quantum dots, Ultra fast spectroscopy",

author = "Gabriele Rain{\`o} and Giuseppe Visimberga and Abdelmajid Salhi and Todaro, \{Maria T.\} and \{De Vittorio\}, Massimo and Adriana Passaseo and Roberto Cingolani and \{De Giorgi\}, Milena",

year = "2007",

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doi = "10.1007/s11671-007-9092-2",

language = "English",

volume = "2",

pages = "509--511",

journal = "Nanoscale Research Letters",

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T1 - The influence of a continuum background on carrier relaxation in InAs/InGaAs quantum dot

AU - Rainò, Gabriele

AU - Visimberga, Giuseppe

AU - Salhi, Abdelmajid

AU - Todaro, Maria T.

AU - De Vittorio, Massimo

AU - Passaseo, Adriana

AU - Cingolani, Roberto

AU - De Giorgi, Milena

PY - 2007/10

Y1 - 2007/10

N2 - We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

AB - We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

KW - Carrier relaxation

KW - Quantum dots

KW - Ultra fast spectroscopy

UR - https://www.scopus.com/pages/publications/34848832128

U2 - 10.1007/s11671-007-9092-2

DO - 10.1007/s11671-007-9092-2

M3 - Article

AN - SCOPUS:34848832128

SN - 1931-7573

VL - 2

SP - 509

EP - 511

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 10

ER -

The influence of a continuum background on carrier relaxation in InAs/InGaAs quantum dot

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Keywords

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