The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon

Antoine Autruffe; Maulid Kivambe; Lars Arnberg; Marisa Di Sabatino

doi:10.1002/pssa.201532651

The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon

Antoine Autruffe^*, Maulid Kivambe, Lars Arnberg, Marisa Di Sabatino

^*Corresponding author for this work

QEERI - Energy Center

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated the source of dislocations generated during growth and subsequent cooling of quasi-monocrystalline silicon. Bi-crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s^-1. We observe higher density of grain boundary-associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.

Original language	English
Pages (from-to)	122-126
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	213
Issue number	1
DOIs	https://doi.org/10.1002/pssa.201532651
Publication status	Published - 1 Jan 2016

Keywords

dislocations
grain boundary
impurities
precipitates
quasi-mono silicon

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10.1002/pssa.201532651

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title = "The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon",

abstract = "We have investigated the source of dislocations generated during growth and subsequent cooling of quasi-monocrystalline silicon. Bi-crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s-1. We observe higher density of grain boundary-associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.",

keywords = "dislocations, grain boundary, impurities, precipitates, quasi-mono silicon",

author = "Antoine Autruffe and Maulid Kivambe and Lars Arnberg and \{Di Sabatino\}, Marisa",

note = "Publisher Copyright: {\textcopyright} 2015 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon. / Autruffe, Antoine; Kivambe, Maulid; Arnberg, Lars et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 213, No. 1, 01.01.2016, p. 122-126.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon

AU - Autruffe, Antoine

AU - Kivambe, Maulid

AU - Arnberg, Lars

AU - Di Sabatino, Marisa

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We have investigated the source of dislocations generated during growth and subsequent cooling of quasi-monocrystalline silicon. Bi-crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s-1. We observe higher density of grain boundary-associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.

AB - We have investigated the source of dislocations generated during growth and subsequent cooling of quasi-monocrystalline silicon. Bi-crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s-1. We observe higher density of grain boundary-associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.

KW - dislocations

KW - grain boundary

KW - impurities

KW - precipitates

KW - quasi-mono silicon

UR - https://www.scopus.com/pages/publications/84954371250

U2 - 10.1002/pssa.201532651

DO - 10.1002/pssa.201532651

M3 - Article

AN - SCOPUS:84954371250

SN - 1862-6300

VL - 213

SP - 122

EP - 126

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 1

ER -

The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon

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Keywords

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