TY - GEN
T1 - The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon
AU - Kivambe, M.
AU - Stokkan, G.
AU - Ervik, T.
AU - Castellanos, S.
AU - Hofstetter, J.
AU - Buonassisi, T.
PY - 2014
Y1 - 2014
N2 - Light microscopy, electron backscatter diffraction and transmission electron microscopy is employed to investigate dislocation structure and impurity precipitation in commonly occurring dislocation clusters as observed on defect-etched directionally solidified multicrystalline silicon wafers. The investigation shows that poligonised structures consist of parallel mostly similar, straight, well-ordered dislocations, with minimal contact-interaction and no evidence of precipitate decoration. On the other hand, disordered structures consist of various dislocation types, with interactions being common. Decoration of dislocations by second phase particles is observed in some cases. Enhanced recombination activity of dislocations may therefore be a result of dislocation interaction forming tangles, microscopic kinks and jogs, which can serve as heterogeneous nucleation sites that enhance metallic decoration.
AB - Light microscopy, electron backscatter diffraction and transmission electron microscopy is employed to investigate dislocation structure and impurity precipitation in commonly occurring dislocation clusters as observed on defect-etched directionally solidified multicrystalline silicon wafers. The investigation shows that poligonised structures consist of parallel mostly similar, straight, well-ordered dislocations, with minimal contact-interaction and no evidence of precipitate decoration. On the other hand, disordered structures consist of various dislocation types, with interactions being common. Decoration of dislocations by second phase particles is observed in some cases. Enhanced recombination activity of dislocations may therefore be a result of dislocation interaction forming tangles, microscopic kinks and jogs, which can serve as heterogeneous nucleation sites that enhance metallic decoration.
KW - Dislocations
KW - Impurity decoration
KW - Multicrystalline silicon
KW - Recombination activity
UR - https://www.scopus.com/pages/publications/84886783570
U2 - 10.4028/www.scientific.net/SSP.205-206.71
DO - 10.4028/www.scientific.net/SSP.205-206.71
M3 - Conference contribution
AN - SCOPUS:84886783570
SN - 9783037858240
T3 - Solid State Phenomena
SP - 71
EP - 76
BT - Gettering and Defect Engineering in Semiconductor Technology XV
PB - Trans Tech Publications Ltd
T2 - 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Y2 - 22 September 2013 through 27 September 2013
ER -