Temperature dependence of optical gain and loss in 2-μ m InP lasers

Abdelmajid Salhi; Pei Chun Chi; Abdullah Alharbi; Gale S. Petrich; Abdulrahman Al-Muhanna; Leslie A. Kolodziejski

doi:10.1109/LPT.2011.2163793

Temperature dependence of optical gain and loss in 2-μ m InP lasers

Abdelmajid Salhi^*
, Pei Chun Chi
, Abdullah Alharbi
, Gale S. Petrich
, Abdulrahman Al-Muhanna
, Leslie A. Kolodziejski

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Temperature-dependent optical gain, loss, and internal quantum efficiency have been measured for continuous-wave operated 2-μm InP laser from 10 °C to 70 °C using the Hakki-Paoli method. Modal gain and loss were extracted from the measured amplified spontaneous emission. The optical loss is constant with temperature, while the material gain decreases from 1128 cm^-1 at 10 °C to 427 cm^-1 at 70 °C. The internal efficiency decreases from 74% to 37% at 10 °C and 50 °C, respectively. The temperature sensitivity of threshold current is due to the decrease of the differential gain and a degradation of internal quantum efficiency.

Original language	English
Article number	5976370
Pages (from-to)	1523-1525
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2011.2163793
Publication status	Published - 2011
Externally published	Yes

Keywords

Indium phosphide
optical losses
semiconductor lasers

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10.1109/LPT.2011.2163793

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title = "Temperature dependence of optical gain and loss in 2-μ m InP lasers",

abstract = "Temperature-dependent optical gain, loss, and internal quantum efficiency have been measured for continuous-wave operated 2-μm InP laser from 10 °C to 70 °C using the Hakki-Paoli method. Modal gain and loss were extracted from the measured amplified spontaneous emission. The optical loss is constant with temperature, while the material gain decreases from 1128 cm-1 at 10 °C to 427 cm-1 at 70 °C. The internal efficiency decreases from 74\% to 37\% at 10 °C and 50 °C, respectively. The temperature sensitivity of threshold current is due to the decrease of the differential gain and a degradation of internal quantum efficiency.",

keywords = "Indium phosphide, optical losses, semiconductor lasers",

author = "Abdelmajid Salhi and Chi, \{Pei Chun\} and Abdullah Alharbi and Petrich, \{Gale S.\} and Abdulrahman Al-Muhanna and Kolodziejski, \{Leslie A.\}",

year = "2011",

doi = "10.1109/LPT.2011.2163793",

language = "English",

volume = "23",

pages = "1523--1525",

journal = "IEEE Photonics Technology Letters",

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T1 - Temperature dependence of optical gain and loss in 2-μ m InP lasers

AU - Salhi, Abdelmajid

AU - Chi, Pei Chun

AU - Alharbi, Abdullah

AU - Petrich, Gale S.

AU - Al-Muhanna, Abdulrahman

AU - Kolodziejski, Leslie A.

PY - 2011

Y1 - 2011

N2 - Temperature-dependent optical gain, loss, and internal quantum efficiency have been measured for continuous-wave operated 2-μm InP laser from 10 °C to 70 °C using the Hakki-Paoli method. Modal gain and loss were extracted from the measured amplified spontaneous emission. The optical loss is constant with temperature, while the material gain decreases from 1128 cm-1 at 10 °C to 427 cm-1 at 70 °C. The internal efficiency decreases from 74% to 37% at 10 °C and 50 °C, respectively. The temperature sensitivity of threshold current is due to the decrease of the differential gain and a degradation of internal quantum efficiency.

AB - Temperature-dependent optical gain, loss, and internal quantum efficiency have been measured for continuous-wave operated 2-μm InP laser from 10 °C to 70 °C using the Hakki-Paoli method. Modal gain and loss were extracted from the measured amplified spontaneous emission. The optical loss is constant with temperature, while the material gain decreases from 1128 cm-1 at 10 °C to 427 cm-1 at 70 °C. The internal efficiency decreases from 74% to 37% at 10 °C and 50 °C, respectively. The temperature sensitivity of threshold current is due to the decrease of the differential gain and a degradation of internal quantum efficiency.

KW - Indium phosphide

KW - optical losses

KW - semiconductor lasers

UR - https://www.scopus.com/pages/publications/80053260937

U2 - 10.1109/LPT.2011.2163793

DO - 10.1109/LPT.2011.2163793

M3 - Article

AN - SCOPUS:80053260937

SN - 1041-1135

VL - 23

SP - 1523

EP - 1525

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 20

M1 - 5976370

ER -

Temperature dependence of optical gain and loss in 2-μ m InP lasers

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Keywords

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