Study of induced structural defects on GaSb films grown on different substrates by the liquid phase epitaxy technique

Gallium antimonide is a promising material for semiconductor technology application. Its structural and electronic properties are very important in the fabrication of semiconductor-based devices working in the energy gap of 0.3-2.4 eV. One of the main advantages of gallium antimonide is that it can be grown as thin film which allows its use in integrated devices. Currently, the large number of studies of the material and developments in obtaining useful instruments are opening up interesting device possibilities - such as laser diodes, photodetectors and thermophotovoltaic cells. But the main factor as regards making useful devices compatible with actual technology is the requirement that these devices must have thicknesses in the region of 10 μm, which means that it is necessary to improve the thin-film fabrications processes. In this work we study the formation of GaSb films over Si{1, 1, 1}, silica, sapphire and CdTe polycrystalline substrates using the liquid phase epitaxy technique. The substrates will induce dislocations, and the generation of polycrystalline and randomly oriented films strongly depends on the type and quality of the substrates used.