Study of defects in InxGa1-xSb bulk crystals

  • C. Díaz-Guerra*
  • , M. F. Chioncel
  • , J. Vincent
  • , V. Bermúdez
  • , J. Piqueras
  • , E. Diéguez
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The homogeneity and luminescence properties of undoped and Te-doped In xGa1-xSb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650°C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.

Original languageEnglish
Pages (from-to)1897-1901
Number of pages5
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number6
DOIs
Publication statusPublished - 2005
Externally publishedYes

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