Second generation current mode active pixel sensor

C. K. Wah; A. Bermak; F. Boussaid

doi:10.1109/EDSSC.2005.1635375

Second generation current mode active pixel sensor

C. K. Wah, A. Bermak, F. Boussaid

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a second generation current mode active pixel sensor is presented. It uses a faster operating technique based on the simultaneous reset/read-out of pixels. It improves the voltage swing at the sensing node from 1.3V to 2.3V in a 3.3V CMOS process.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	713-716
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635375
Publication status	Published - 2005
Externally published	Yes
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 19 Dec 2005 → 21 Dec 2005

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	19/12/05 → 21/12/05

Access to Document

10.1109/EDSSC.2005.1635375

Cite this

Wah, C. K., Bermak, A., & Boussaid, F. (2005). Second generation current mode active pixel sensor. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 713-716). Article 1635375 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635375

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title = "Second generation current mode active pixel sensor",

abstract = "In this paper, a second generation current mode active pixel sensor is presented. It uses a faster operating technique based on the simultaneous reset/read-out of pixels. It improves the voltage swing at the sensing node from 1.3V to 2.3V in a 3.3V CMOS process.",

author = "Wah, \{C. K.\} and A. Bermak and F. Boussaid",

year = "2005",

doi = "10.1109/EDSSC.2005.1635375",

language = "English",

isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "713--716",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

address = "United States",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

Wah, CK, Bermak, A & Boussaid, F 2005, Second generation current mode active pixel sensor. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635375, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 713-716, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635375

Second generation current mode active pixel sensor. / Wah, C. K.; Bermak, A.; Boussaid, F.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 713-716 1635375 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Second generation current mode active pixel sensor

AU - Wah, C. K.

AU - Bermak, A.

AU - Boussaid, F.

PY - 2005

Y1 - 2005

N2 - In this paper, a second generation current mode active pixel sensor is presented. It uses a faster operating technique based on the simultaneous reset/read-out of pixels. It improves the voltage swing at the sensing node from 1.3V to 2.3V in a 3.3V CMOS process.

AB - In this paper, a second generation current mode active pixel sensor is presented. It uses a faster operating technique based on the simultaneous reset/read-out of pixels. It improves the voltage swing at the sensing node from 1.3V to 2.3V in a 3.3V CMOS process.

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U2 - 10.1109/EDSSC.2005.1635375

DO - 10.1109/EDSSC.2005.1635375

M3 - Conference contribution

AN - SCOPUS:43549084603

SN - 0780393392

SN - 9780780393394

T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

SP - 713

EP - 716

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Second generation current mode active pixel sensor

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