Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Maulid M. Kivambe; Jan Haschke; Jörg Horzel; Brahim Aïssa; Amir A. Abdallah; Abdelhak Belaidi; Raphaël Monnard; Loris Barraud; Antoine Descoeudres; Fabien Debrot; Matthieu Despeisse; Mathieu Boccard; Christophe Ballif; Nouar Tabet

doi:10.1021/acsaem.9b00608

Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Maulid M. Kivambe^*, Jan Haschke, Jörg Horzel, Brahim Aïssa, Amir A. Abdallah, Abdelhak Belaidi, Raphaël Monnard, Loris Barraud, Antoine Descoeudres, Fabien Debrot, Matthieu Despeisse, Mathieu Boccard, Christophe Ballif, Nouar Tabet

^*Corresponding author for this work

QEERI - Energy Center

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.

Original language	English
Pages (from-to)	4900-4906
Number of pages	7
Journal	ACS Applied Energy Materials
Volume	2
Issue number	7
DOIs	https://doi.org/10.1021/acsaem.9b00608
Publication status	Published - 22 Jul 2019

Keywords

cast-mono Si
high efficiency
monolike Si
phosphorus diffusion gettering
quasi-mono Si
silicon heterojunction solar cell

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10.1021/acsaem.9b00608

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Kivambe, M. M., Haschke, J., Horzel, J., Aïssa, B., Abdallah, A. A., Belaidi, A., Monnard, R., Barraud, L., Descoeudres, A., Debrot, F., Despeisse, M., Boccard, M., Ballif, C., & Tabet, N. (2019). Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process. ACS Applied Energy Materials, 2(7), 4900-4906. https://doi.org/10.1021/acsaem.9b00608

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title = "Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process",

abstract = "We report independently confirmed 22.15\% and record 22.58\% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.",

keywords = "cast-mono Si, high efficiency, monolike Si, phosphorus diffusion gettering, quasi-mono Si, silicon heterojunction solar cell",

author = "Kivambe, \{Maulid M.\} and Jan Haschke and J{\"o}rg Horzel and Brahim A{\"i}ssa and Abdallah, \{Amir A.\} and Abdelhak Belaidi and Rapha{\"e}l Monnard and Loris Barraud and Antoine Descoeudres and Fabien Debrot and Matthieu Despeisse and Mathieu Boccard and Christophe Ballif and Nouar Tabet",

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doi = "10.1021/acsaem.9b00608",

language = "English",

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Kivambe, MM, Haschke, J, Horzel, J, Aïssa, B , Abdallah, AA, Belaidi, A, Monnard, R, Barraud, L, Descoeudres, A, Debrot, F, Despeisse, M, Boccard, M, Ballif, C & Tabet, N 2019, 'Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process', ACS Applied Energy Materials, vol. 2, no. 7, pp. 4900-4906. https://doi.org/10.1021/acsaem.9b00608

TY - JOUR

T1 - Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

AU - Kivambe, Maulid M.

AU - Haschke, Jan

AU - Horzel, Jörg

AU - Aïssa, Brahim

AU - Abdallah, Amir A.

AU - Belaidi, Abdelhak

AU - Monnard, Raphaël

AU - Barraud, Loris

AU - Descoeudres, Antoine

AU - Debrot, Fabien

AU - Despeisse, Matthieu

AU - Boccard, Mathieu

AU - Ballif, Christophe

AU - Tabet, Nouar

PY - 2019/7/22

Y1 - 2019/7/22

N2 - We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.

AB - We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.

KW - cast-mono Si

KW - high efficiency

KW - monolike Si

KW - phosphorus diffusion gettering

KW - quasi-mono Si

KW - silicon heterojunction solar cell

UR - https://www.scopus.com/pages/publications/85070553275

U2 - 10.1021/acsaem.9b00608

DO - 10.1021/acsaem.9b00608

M3 - Article

AN - SCOPUS:85070553275

SN - 2574-0962

VL - 2

SP - 4900

EP - 4906

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 7

ER -

Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

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Keywords

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