Abstract
Molybdenum Disulfide (MoS2) is a potential low cost, alternative sunlight harvester for a possible replacement of the conventional photovoltaic materials. It is a suitable photovoltaic absorber material mainly due to its optimum optical and electrical properties. In this work, we numerically analyze both hetero-junction and homo-junction device structures of MoS2 by ID-Solar Cell Capacitance Simulator (SCAPS). Both n-ZnO/n- CdS/p-MoS2 and n-MoS2/p-MoS2 show the conversion efficiencies above 19%. We also study various window layer materials to optimize the performance of the hetero-junction structure. The analysis includes the device stability as well operating temperature. The analyzed results indicate the feasible fabrication of high efficiency MoS2 based solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 397-403 |
| Number of pages | 7 |
| Journal | Chalcogenide Letters |
| Volume | 11 |
| Issue number | 8 |
| Publication status | Published - 2014 |
Keywords
- Absorber Layer
- Electrical Performance
- MoS
- SCAPS
- TMDC Materials
- Thin Film Solar Cells