@inproceedings{081468eef28c4f13b8f35765ff07a83b,
title = "Piecewise BJT process spread compensation exploiting base recombination current",
abstract = "In this paper, a piecewise bipolar junction transistor (BJT) process spread compensation scheme is presented. By exploiting the strong correlation between the BJT saturation current and the piecewise base recombination current, the process spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) can be reduced over a wide temperature range. Fabricated in standard 0.18-μm CMOS, the chip prototype achieves a measured Vbe standard deviation (STD) of 1.1 mV (1.8 mV) from -30 to 60 °C (-30 to 120 °C) over 12 samples, corresponding to a 2.9X (1.8X) improvement when compared to the measured Vbe STD of 3.24 mV at 25 °C from 15 standalone BJT samples with constant external bias current using the same process.",
keywords = "Bipolar junction transistor (BJT), base recombination current, piecewise process spread compensation",
author = "Dapeng Sun and Law, \{Man Kay\} and Bo Wang and Mak, \{Pui In\} and Martins, \{Rui P.\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 ; Conference date: 28-05-2017 Through 31-05-2017",
year = "2017",
month = sep,
day = "25",
doi = "10.1109/ISCAS.2017.8050475",
language = "English",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IEEE International Symposium on Circuits and Systems",
address = "United States",
}