Physical properties of Bi doped CdTe thin films grown by the CSVT method

O. Vigil-Galán; J. Sastré-Hernández; F. Cruz-Gandarilla; J. Aguilar-Hernández; E. Marín; G. Contreras-Puente; E. Saucedo; C. M. Ruiz; V. Bermúdez; M. Tufiño-Velázquez

doi:10.1016/j.solmat.2006.02.021

Physical properties of Bi doped CdTe thin films grown by the CSVT method

O. Vigil-Galán^*
, J. Sastré-Hernández
, F. Cruz-Gandarilla
, J. Aguilar-Hernández
, E. Marín
, G. Contreras-Puente
, E. Saucedo
, C. M. Ruiz
, V. Bermúdez
, M. Tufiño-Velázquez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×10¹⁷-8×10¹⁸ cm^-3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×10⁵ Ω-cm for Bi concentrations of 8×10¹⁸ cm^-3. These are meaningful results for CdTe-based solar cells.

Original language	English
Pages (from-to)	2228-2234
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	15
DOIs	https://doi.org/10.1016/j.solmat.2006.02.021
Publication status	Published - 22 Sept 2006
Externally published	Yes

Keywords

Bi doping
CSVT method
CdTe
Physical properties
Thin films

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10.1016/j.solmat.2006.02.021

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Vigil-Galán, O., Sastré-Hernández, J., Cruz-Gandarilla, F., Aguilar-Hernández, J., Marín, E., Contreras-Puente, G., Saucedo, E., Ruiz, C. M., Bermúdez, V., & Tufiño-Velázquez, M. (2006). Physical properties of Bi doped CdTe thin films grown by the CSVT method. Solar Energy Materials and Solar Cells, 90(15), 2228-2234. https://doi.org/10.1016/j.solmat.2006.02.021

@article{14335a565ccb439991b09d91e276a670,

title = "Physical properties of Bi doped CdTe thin films grown by the CSVT method",

abstract = "A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×1017-8×1018 cm-3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×105 Ω-cm for Bi concentrations of 8×1018 cm-3. These are meaningful results for CdTe-based solar cells.",

keywords = "Bi doping, CSVT method, CdTe, Physical properties, Thin films",

author = "O. Vigil-Gal{\'a}n and J. Sastr{\'e}-Hern{\'a}ndez and F. Cruz-Gandarilla and J. Aguilar-Hern{\'a}ndez and E. Mar{\'i}n and G. Contreras-Puente and E. Saucedo and Ruiz, \{C. M.\} and V. Berm{\'u}dez and M. Tufi{\~n}o-Vel{\'a}zquez",

year = "2006",

month = sep,

day = "22",

doi = "10.1016/j.solmat.2006.02.021",

language = "English",

volume = "90",

pages = "2228--2234",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

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Vigil-Galán, O, Sastré-Hernández, J, Cruz-Gandarilla, F, Aguilar-Hernández, J, Marín, E, Contreras-Puente, G, Saucedo, E, Ruiz, CM, Bermúdez, V & Tufiño-Velázquez, M 2006, 'Physical properties of Bi doped CdTe thin films grown by the CSVT method', Solar Energy Materials and Solar Cells, vol. 90, no. 15, pp. 2228-2234. https://doi.org/10.1016/j.solmat.2006.02.021

TY - JOUR

T1 - Physical properties of Bi doped CdTe thin films grown by the CSVT method

AU - Vigil-Galán, O.

AU - Sastré-Hernández, J.

AU - Cruz-Gandarilla, F.

AU - Aguilar-Hernández, J.

AU - Marín, E.

AU - Contreras-Puente, G.

AU - Saucedo, E.

AU - Ruiz, C. M.

AU - Bermúdez, V.

AU - Tufiño-Velázquez, M.

PY - 2006/9/22

Y1 - 2006/9/22

N2 - A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×1017-8×1018 cm-3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×105 Ω-cm for Bi concentrations of 8×1018 cm-3. These are meaningful results for CdTe-based solar cells.

AB - A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×1017-8×1018 cm-3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×105 Ω-cm for Bi concentrations of 8×1018 cm-3. These are meaningful results for CdTe-based solar cells.

KW - Bi doping

KW - CSVT method

KW - CdTe

KW - Physical properties

KW - Thin films

UR - https://www.scopus.com/pages/publications/33745250146

U2 - 10.1016/j.solmat.2006.02.021

DO - 10.1016/j.solmat.2006.02.021

M3 - Article

AN - SCOPUS:33745250146

SN - 0927-0248

VL - 90

SP - 2228

EP - 2234

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 15

ER -

Physical properties of Bi doped CdTe thin films grown by the CSVT method

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