PHOTOVOLTAIC PEROVSKITE OXYCHALCOGENIDE MATERIAL AND OPTOELECTRONIC DEVICES INCLUDING THE SAME

Fadwa El-Mellouhi; Nouar Tabet; Fahhad Hussain Alharbi; Stefano Sanvito; Heesoo Park; Fadwa El-Mellouhi; Nouar Tabet; Fahhad Hussain Alharbi; Stefano Sanvito; Heesoo Park

PHOTOVOLTAIC PEROVSKITE OXYCHALCOGENIDE MATERIAL AND OPTOELECTRONIC DEVICES INCLUDING THE SAME

Fadwa El-Mellouhi (Inventor), Nouar Tabet (Inventor), Fahhad Hussain Alharbi (Inventor), Stefano Sanvito (Inventor), Heesoo Park (Inventor), Fadwa El-Mellouhi (Inventor), Nouar Tabet (Inventor), Fahhad Hussain Alharbi (Inventor), Stefano Sanvito (Inventor), Heesoo Park (Inventor)

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Abstract

Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.

Original language	English
Patent number	US2019122829
IPC	H01L 51/ 00 A I
Priority date	19/10/18
Publication status	Published - 25 Apr 2019

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title = "PHOTOVOLTAIC PEROVSKITE OXYCHALCOGENIDE MATERIAL AND OPTOELECTRONIC DEVICES INCLUDING THE SAME",

abstract = "Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.",

author = "Fadwa El-Mellouhi and Nouar Tabet and Alharbi, \{Fahhad Hussain\} and Stefano Sanvito and Heesoo Park and Fadwa El-Mellouhi and Nouar Tabet and Alharbi, \{Fahhad Hussain\} and Stefano Sanvito and Heesoo Park",

year = "2019",

month = apr,

day = "25",

language = "English",

type = "Patent",

note = "US2019122829; H01L 51/ 00 A I",

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TY - PAT

T1 - PHOTOVOLTAIC PEROVSKITE OXYCHALCOGENIDE MATERIAL AND OPTOELECTRONIC DEVICES INCLUDING THE SAME

AU - El-Mellouhi, Fadwa

AU - Tabet, Nouar

AU - Alharbi, Fahhad Hussain

AU - Sanvito, Stefano

AU - Park, Heesoo

AU - El-Mellouhi, Fadwa

AU - Tabet, Nouar

AU - Alharbi, Fahhad Hussain

AU - Sanvito, Stefano

AU - Park, Heesoo

PY - 2019/4/25

Y1 - 2019/4/25

N2 - Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.

AB - Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.

M3 - Patent

M1 - US2019122829

ER -

PHOTOVOLTAIC PEROVSKITE OXYCHALCOGENIDE MATERIAL AND OPTOELECTRONIC DEVICES INCLUDING THE SAME

Abstract

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