Photoluminescence and photoconductivity in CdTe crystals doped with Bi

E. Saucedo; C. M. Ruiz; V. Bermúdez; E. Dieguez; E. Gombia; A. Zappettini; A. Baraldi; N. V. Sochinskii

doi:10.1063/1.2382668

Photoluminescence and photoconductivity in CdTe crystals doped with Bi

E. Saucedo^*, C. M. Ruiz, V. Bermúdez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi, N. V. Sochinskii

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at Ev +0.71 eV, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at Ev +0.30 eV, assigned to BiTe species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples.

Original language	English
Article number	104901
Journal	Journal of Applied Physics
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.2382668
Publication status	Published - 2006
Externally published	Yes

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@article{e5988744c3d54f20972c87929cfd9562,

title = "Photoluminescence and photoconductivity in CdTe crystals doped with Bi",

abstract = "Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at Ev +0.71 eV, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at Ev +0.30 eV, assigned to BiTe species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples.",

author = "E. Saucedo and Ruiz, \{C. M.\} and V. Berm{\'u}dez and E. Dieguez and E. Gombia and A. Zappettini and A. Baraldi and Sochinskii, \{N. V.\}",

year = "2006",

doi = "10.1063/1.2382668",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

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TY - JOUR

T1 - Photoluminescence and photoconductivity in CdTe crystals doped with Bi

AU - Saucedo, E.

AU - Ruiz, C. M.

AU - Bermúdez, V.

AU - Dieguez, E.

AU - Gombia, E.

AU - Zappettini, A.

AU - Baraldi, A.

AU - Sochinskii, N. V.

PY - 2006

Y1 - 2006

N2 - Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at Ev +0.71 eV, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at Ev +0.30 eV, assigned to BiTe species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples.

AB - Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at Ev +0.71 eV, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at Ev +0.30 eV, assigned to BiTe species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples.

UR - https://www.scopus.com/pages/publications/33845194389

U2 - 10.1063/1.2382668

DO - 10.1063/1.2382668

M3 - Article

AN - SCOPUS:33845194389

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 104901

ER -

Photoluminescence and photoconductivity in CdTe crystals doped with Bi

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