Origin of anomalous polarization offsets in compositionally graded Pb(Zr, Ti)O3 thin films

Mark Brazier; M. McElfresh; Said Mansour

doi:10.1063/1.123004

Origin of anomalous polarization offsets in compositionally graded Pb(Zr, Ti)O₃ thin films

Mark Brazier^*
, M. McElfresh
, Said Mansour

^*Corresponding author for this work

Purdue University

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

Ferroelectric films with composition gradients normal to the substrate have recently been reported to exhibit anomalously large polarization offsets when hysteresis loops are driven with an ac voltage and measured using a Sawyer-Tower (ST) circuit. These offsets have been reported in graded Pb(Zr, Ti)O₃ (over 400 μC/cm²) and graded (Ba, Sr)TiO₃ (30 μC/cm²) films. In this work, it was found that the offset observed in graded Pb(Zr, Ti)O₃ films can be attributed to development of a dc voltage across the ac-voltage driven film, rather than a polarization offset. Recognition of this result reduces these previously reported offset values by a factor of C_s/C_ref, where C_ref and C_s are the reference and sample capacitances, respectively, used in the ST circuit. These dc-voltage offsets still represent a phenomenon which may lead to novel device applications.

Original language	English
Pages (from-to)	299-301
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	2
DOIs	https://doi.org/10.1063/1.123004
Publication status	Published - 11 Jan 1999
Externally published	Yes

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title = "Origin of anomalous polarization offsets in compositionally graded Pb(Zr, Ti)O3 thin films",

abstract = "Ferroelectric films with composition gradients normal to the substrate have recently been reported to exhibit anomalously large polarization offsets when hysteresis loops are driven with an ac voltage and measured using a Sawyer-Tower (ST) circuit. These offsets have been reported in graded Pb(Zr, Ti)O3 (over 400 μC/cm2) and graded (Ba, Sr)TiO3 (30 μC/cm2) films. In this work, it was found that the offset observed in graded Pb(Zr, Ti)O3 films can be attributed to development of a dc voltage across the ac-voltage driven film, rather than a polarization offset. Recognition of this result reduces these previously reported offset values by a factor of Cs/Cref, where Cref and Cs are the reference and sample capacitances, respectively, used in the ST circuit. These dc-voltage offsets still represent a phenomenon which may lead to novel device applications.",

author = "Mark Brazier and M. McElfresh and Said Mansour",

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T1 - Origin of anomalous polarization offsets in compositionally graded Pb(Zr, Ti)O3 thin films

AU - Brazier, Mark

AU - McElfresh, M.

AU - Mansour, Said

PY - 1999/1/11

Y1 - 1999/1/11

N2 - Ferroelectric films with composition gradients normal to the substrate have recently been reported to exhibit anomalously large polarization offsets when hysteresis loops are driven with an ac voltage and measured using a Sawyer-Tower (ST) circuit. These offsets have been reported in graded Pb(Zr, Ti)O3 (over 400 μC/cm2) and graded (Ba, Sr)TiO3 (30 μC/cm2) films. In this work, it was found that the offset observed in graded Pb(Zr, Ti)O3 films can be attributed to development of a dc voltage across the ac-voltage driven film, rather than a polarization offset. Recognition of this result reduces these previously reported offset values by a factor of Cs/Cref, where Cref and Cs are the reference and sample capacitances, respectively, used in the ST circuit. These dc-voltage offsets still represent a phenomenon which may lead to novel device applications.

AB - Ferroelectric films with composition gradients normal to the substrate have recently been reported to exhibit anomalously large polarization offsets when hysteresis loops are driven with an ac voltage and measured using a Sawyer-Tower (ST) circuit. These offsets have been reported in graded Pb(Zr, Ti)O3 (over 400 μC/cm2) and graded (Ba, Sr)TiO3 (30 μC/cm2) films. In this work, it was found that the offset observed in graded Pb(Zr, Ti)O3 films can be attributed to development of a dc voltage across the ac-voltage driven film, rather than a polarization offset. Recognition of this result reduces these previously reported offset values by a factor of Cs/Cref, where Cref and Cs are the reference and sample capacitances, respectively, used in the ST circuit. These dc-voltage offsets still represent a phenomenon which may lead to novel device applications.

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DO - 10.1063/1.123004

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Origin of anomalous polarization offsets in compositionally graded Pb(Zr, Ti)O₃ thin films

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