Optimization of operation regimes for extended-gate field effect transistors (EGFET) integrated with ion selective membrane (ISM) for amperometric pH sensing with GM/ID theory

Bo Gao, Mingzheng Duan, Qing Chen, Amine Bermak, Yi Kuen Lee*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The gm/ID theory was applied to systematically study the optimized operation regime of a fabricated Extended-Gate Field Effect Transistor (EGFET) with the hydrogen ion selective membrane (ISM) for amperometric pH sensing. Electrochemical Impedance Spectroscopy (EIS) and electrical characterization was conducted on the EGFET. With the parametric analysis in the IC CAD software (Cadence, USA) using Global Foundries 0.18µm 1P6M CMOS process, and normalized experimental data, the optimized operation regime of pH-EGFET was determined to give higher sensor output and higher normalized sensitivity.

Original languageEnglish
Title of host publication21st International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2017
PublisherChemical and Biological Microsystems Society
Pages517-518
Number of pages2
ISBN (Electronic)9780692941836
Publication statusPublished - 2020
Event21st International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2017 - Savannah, United States
Duration: 22 Oct 201726 Oct 2017

Publication series

Name21st International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2017

Conference

Conference21st International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2017
Country/TerritoryUnited States
CitySavannah
Period22/10/1726/10/17

Keywords

  • EGFET
  • Gm/ID
  • Ion selective membrane
  • PH

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