Numerical analysis of InGaAs-InP multiple-quantum well laser emitting at 2 μ m

Multiple-quantum well InGaAs laser structures emitting at 2 μ m with different barriers are modeled using commercial software that combines gain calculation with 2-D simulations of carrier transport and waveguiding. The model is calibrated using experimental results. The simulated results show a non-uniform distribution of carriers in different quantum wells with InGaAlAs barriers which affects their contribution to the gain. The carrier uniformity and a reduction in threshold current density are observed when we use an InGaAs barrier material. The quantum well number was varied from 2 to 4 in both structures and a comparison of the threshold current and its variation with temperature were investigated.