Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

S. R. Sarath Kumar; Anas I. Abutaha; M. N. Hedhili; H. N. Alshareef

doi:10.1063/1.3678186

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

S. R. Sarath Kumar, Anas I. Abutaha, M. N. Hedhili, H. N. Alshareef^*

^*Corresponding author for this work

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO ₃ thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H ₂. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm ^-1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 m _e), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Original language	English
Article number	052110
Journal	Applied Physics Letters
Volume	100
Issue number	5
DOIs	https://doi.org/10.1063/1.3678186
Publication status	Published - 30 Jan 2012
Externally published	Yes

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title = "Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry",

abstract = "The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO 3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H 2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm -1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 m e), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.",

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T1 - Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

AU - Sarath Kumar, S. R.

AU - Abutaha, Anas I.

AU - Hedhili, M. N.

AU - Alshareef, H. N.

PY - 2012/1/30

Y1 - 2012/1/30

N2 - The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO 3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H 2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm -1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 m e), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

AB - The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO 3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H 2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm -1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 m e), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

UR - https://www.scopus.com/pages/publications/84857005243

U2 - 10.1063/1.3678186

DO - 10.1063/1.3678186

M3 - Article

AN - SCOPUS:84857005243

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052110

ER -

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

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