Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method
- Maulid Kivambe*
- , Douglas M. Powell
- , Sergio Castellanos
- , Mallory Ann Jensen
- , Ashley E. Morishige
- , Kazuo Nakajima
- , Kohei Morishita
- , Ryota Murai
- , Tonio Buonassisi
*Corresponding author for this work
- Massachusetts Institute of Technology
- FUTURE-PV Innovation
- Kyoto University
Research output: Contribution to journal › Article › peer-review
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