Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm

Michel Garcia; A. Salhi; A. Pérona; Y. Rouillard; C. Sirtori; X. Marcadet; C. Alibert

doi:10.1109/LPT.2004.826053

Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm

Michel Garcia^*, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. Alibert

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm² for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm × 1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.

Original language	English
Pages (from-to)	1253-1255
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	5
DOIs	https://doi.org/10.1109/LPT.2004.826053
Publication status	Published - May 2004
Externally published	Yes

Keywords

Coatings
Continuous-wave (CW) lasers
Fabrication
Ohmic contacts
Semiconductor lasers

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10.1109/LPT.2004.826053

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title = "Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm",

abstract = "Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78\% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm × 1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.",

keywords = "Coatings, Continuous-wave (CW) lasers, Fabrication, Ohmic contacts, Semiconductor lasers",

author = "Michel Garcia and A. Salhi and A. P{\'e}rona and Y. Rouillard and C. Sirtori and X. Marcadet and C. Alibert",

year = "2004",

month = may,

doi = "10.1109/LPT.2004.826053",

language = "English",

volume = "16",

pages = "1253--1255",

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issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm

AU - Garcia, Michel

AU - Salhi, A.

AU - Pérona, A.

AU - Rouillard, Y.

AU - Sirtori, C.

AU - Marcadet, X.

AU - Alibert, C.

PY - 2004/5

Y1 - 2004/5

N2 - Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm × 1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.

AB - Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm × 1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.

KW - Coatings

KW - Continuous-wave (CW) lasers

KW - Fabrication

KW - Ohmic contacts

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/2442595862

U2 - 10.1109/LPT.2004.826053

DO - 10.1109/LPT.2004.826053

M3 - Article

AN - SCOPUS:2442595862

SN - 1041-1135

VL - 16

SP - 1253

EP - 1255

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 5

ER -

Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm

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Keywords

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