Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm

A. Salhi; Y. Rouillard; A. Pérona; P. Grech; M. Garcia; C. Sirtori

doi:10.1088/0268-1242/19/2/024

Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm

A. Salhi^*
, Y. Rouillard
, A. Pérona
, P. Grech
, M. Garcia
, C. Sirtori

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We report on low-threshold high-power quantum well diode lasers emitting near 2.3 μm based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well is as low as 63 A cm^-2. A maximum output power of 540 mW at 293 K in the continuous wave regime has been achieved.

Original language	English
Pages (from-to)	260-262
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	19
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/19/2/024
Publication status	Published - Feb 2004
Externally published	Yes

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10.1088/0268-1242/19/2/024

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title = "Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm",

abstract = "We report on low-threshold high-power quantum well diode lasers emitting near 2.3 μm based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well is as low as 63 A cm-2. A maximum output power of 540 mW at 293 K in the continuous wave regime has been achieved.",

author = "A. Salhi and Y. Rouillard and A. P{\'e}rona and P. Grech and M. Garcia and C. Sirtori",

year = "2004",

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doi = "10.1088/0268-1242/19/2/024",

language = "English",

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pages = "260--262",

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T1 - Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm

AU - Salhi, A.

AU - Rouillard, Y.

AU - Pérona, A.

AU - Grech, P.

AU - Garcia, M.

AU - Sirtori, C.

PY - 2004/2

Y1 - 2004/2

N2 - We report on low-threshold high-power quantum well diode lasers emitting near 2.3 μm based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well is as low as 63 A cm-2. A maximum output power of 540 mW at 293 K in the continuous wave regime has been achieved.

AB - We report on low-threshold high-power quantum well diode lasers emitting near 2.3 μm based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well is as low as 63 A cm-2. A maximum output power of 540 mW at 293 K in the continuous wave regime has been achieved.

UR - https://www.scopus.com/pages/publications/1242310587

U2 - 10.1088/0268-1242/19/2/024

DO - 10.1088/0268-1242/19/2/024

M3 - Article

AN - SCOPUS:1242310587

SN - 0268-1242

VL - 19

SP - 260

EP - 262

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 2

ER -

Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm

Abstract

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