Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

A. I. Abutaha; S. R. Sarath Kumar; H. N. Alshareef

doi:10.1063/1.4704183

Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

A. I. Abutaha
, S. R. Sarath Kumar
, H. N. Alshareef^*

^*Corresponding author for this work

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO ₃ (SLTO) thin films epitaxially grown on LaAlO ₃ 100 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K ^-1 m ^-1 has been achieved at 636 K for a film deposited using the highest laser fluence of 7 J cm ^-2 pulse ^-1.

Original language	English
Article number	162106
Journal	Applied Physics Letters
Volume	100
Issue number	16
DOIs	https://doi.org/10.1063/1.4704183
Publication status	Published - 16 Apr 2012
Externally published	Yes

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abstract = "The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO 3 (SLTO) thin films epitaxially grown on LaAlO 3 100 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K -1 m -1 has been achieved at 636 K for a film deposited using the highest laser fluence of 7 J cm -2 pulse -1.",

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AU - Abutaha, A. I.

AU - Sarath Kumar, S. R.

AU - Alshareef, H. N.

PY - 2012/4/16

Y1 - 2012/4/16

N2 - The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO 3 (SLTO) thin films epitaxially grown on LaAlO 3 100 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K -1 m -1 has been achieved at 636 K for a film deposited using the highest laser fluence of 7 J cm -2 pulse -1.

AB - The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO 3 (SLTO) thin films epitaxially grown on LaAlO 3 100 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K -1 m -1 has been achieved at 636 K for a film deposited using the highest laser fluence of 7 J cm -2 pulse -1.

UR - https://www.scopus.com/pages/publications/84859968487

U2 - 10.1063/1.4704183

DO - 10.1063/1.4704183

M3 - Article

AN - SCOPUS:84859968487

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162106

ER -

Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

Abstract

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