TY - JOUR
T1 - Kinetic activation-relaxation technique
T2 - An off-lattice self-learning kinetic Monte Carlo algorithm
AU - El-Mellouhi, Fedwa
AU - Mousseau, Normand
AU - Lewis, Laurent J.
PY - 2008/10/7
Y1 - 2008/10/7
N2 - Many materials science phenomena are dominated by activated diffusion processes and occur on time scales that are well beyond the reach of standard molecular-dynamics simulations. Kinetic Monte Carlo (KMC) schemes make it possible to overcome this limitation and achieve experimental time scales. However, most KMC approaches proceed by discretizing the problem in space in order to identify, from the outset, a fixed set of barriers that are used throughout the simulations, limiting the range of problems that can be addressed. Here, we propose a flexible approach-the kinetic activation- relaxation technique (k -ART)-which lifts these constraints. Our method is based on an off-lattice, self-learning, on-the-fly identification and evaluation of activation barriers using ART and a topological description of events. Using this method, we demonstrate that elastic deformations are determinant to the diffusion kinetics of vacancies in Si and are responsible for their trapping.
AB - Many materials science phenomena are dominated by activated diffusion processes and occur on time scales that are well beyond the reach of standard molecular-dynamics simulations. Kinetic Monte Carlo (KMC) schemes make it possible to overcome this limitation and achieve experimental time scales. However, most KMC approaches proceed by discretizing the problem in space in order to identify, from the outset, a fixed set of barriers that are used throughout the simulations, limiting the range of problems that can be addressed. Here, we propose a flexible approach-the kinetic activation- relaxation technique (k -ART)-which lifts these constraints. Our method is based on an off-lattice, self-learning, on-the-fly identification and evaluation of activation barriers using ART and a topological description of events. Using this method, we demonstrate that elastic deformations are determinant to the diffusion kinetics of vacancies in Si and are responsible for their trapping.
UR - https://www.scopus.com/pages/publications/54449099239
U2 - 10.1103/PhysRevB.78.153202
DO - 10.1103/PhysRevB.78.153202
M3 - Article
AN - SCOPUS:54449099239
SN - 1098-0121
VL - 78
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 15
M1 - 153202
ER -