Influence of Substrate temperature on the performance of Schottky photodetector based on Au/n-Si structure

Keyphrases

• Substrate Temperature 100%
• Au Nanoparticles (AuNPs) 100%
• N-Si 100%
• Si Structures 100%
• Schottky Photodetector 100%
• Metal Nanoparticles 66%
• Solar Cell 33%
• Temperature Rise 33%
• Annealing Temperature 33%
• Photodetector 33%
• Charge Transport 33%
• Nanostructures 33%
• Gas Sensor 33%
• Incident Light 33%
• Pulsed Laser Deposition 33%
• Semiconductors 33%
• Surface Plasmon Resonance 33%
• Effective Charge 33%
• Si Substrate 33%
• Band Gap Energy 33%
• LED Light Source 33%
• Deposited Metal 33%
• Responsivity 33%
• Si-based 33%
• Resonance Wavelength 33%
• Dielectric Medium 33%
• Semiconductor Surface 33%
• Controllable Synthesis 33%
• Spectral Area 33%
• Schottky Barrier Photodetectors 33%
• Semiconductor Bandgap 33%
• Different Substrate Temperature 33%
• Quantum Confinement Effect 33%
• Si Photodetectors 33%
• Internal Photoemission 33%
• Schottky Contact 33%

Engineering

• Photodetector 100%
• Substrate Temperature 100%
• Nanoparticle 75%
• Schottky Barrier 50%
• Metal Nanoparticle 50%
• Thin Films 25%
• Temperature Rise 25%
• Nanomaterial 25%
• Annealing Temperature 25%
• Deposited Metal 25%
• Gas Sensor 25%
• Charge Transport 25%
• Light Incident 25%
• Photoemission 25%
• Si Substrate 25%
• Responsivity 25%
• Effective Charge 25%
• Solar Cell 25%
• Band Gap 25%
• Surface Plasmon 25%
• Photometer 25%
• Pulsed Laser 25%
• Semiconductor Surface 25%
• Quantum Confinement Effect 25%
• Dielectric Medium 25%
• Resonance Wavelength 25%

Material Science

• Gas Sensor 20%