Influence of Substrate temperature on the performance of Schottky photodetector based on Au/n-Si structure

Nowadays, metal nanoparticles (NPs) are particularly very promising and intriguing in research and technology be-cause of their quantum confinement effect, easy manufacturing, low-cost, controllable synthesis, and more effective charge transport [1]. These nanostructures are utilized to develop a device such as gas sensors, solar cells, photodetectors, and LEDs. The surface plasmon resonance wave-length of the metal NPs can be tailored to certain spectral areas by modifying their size, shape, and surrounding dielectric medium [2]. The energy of incident light below the semiconductor's bandgap energy can be detected using an internal photoemission Schottky barrier photodetector developed at the interface of a metal and semiconductor.[3] The interface between deposited metal and the semiconductor surface plays a significant role in determining the quality of a Schottky contact. As the annealing temperature rises, several aspects of the interface alter. In this report, Au-NPs /n-Si-based Schottky photodetector is fabricated by depositing Au-nanoparticle thin film on a Si substrate at different substrate temperatures using a pulsed laser deposition technique. The Au NPs/ n-Si photodetector shows good responsivity of 1.095 A/W under the illumination of a 735nm wavelength LED source.