High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers

Maria Teresa Todaro; A. Salhi; L. Fortunato; R. Cingolani; A. Passaseo; M. De Vittorio; P. Della Casa; F. Ghiglieno; L. Bianco

doi:10.1109/LPT.2006.890045

High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers

Maria Teresa Todaro^*, A. Salhi, L. Fortunato, R. Cingolani, A. Passaseo, M. De Vittorio, P. Della Casa, F. Ghiglieno, L. Bianco

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm^-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.

Original language	English
Pages (from-to)	191-193
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2006.890045
Publication status	Published - 15 Feb 2007
Externally published	Yes

Keywords

In(Ga)As
Modulation
Quantum dots (QDs)
Semiconductor lasers

Access to Document

10.1109/LPT.2006.890045

Cite this

@article{552543e11dc14d149b91085a445d31a8,

title = "High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers",

abstract = "In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.",

keywords = "In(Ga)As, Modulation, Quantum dots (QDs), Semiconductor lasers",

author = "Todaro, \{Maria Teresa\} and A. Salhi and L. Fortunato and R. Cingolani and A. Passaseo and \{De Vittorio\}, M. and \{Della Casa\}, P. and F. Ghiglieno and L. Bianco",

year = "2007",

month = feb,

day = "15",

doi = "10.1109/LPT.2006.890045",

language = "English",

volume = "19",

pages = "191--193",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers

AU - Todaro, Maria Teresa

AU - Salhi, A.

AU - Fortunato, L.

AU - Cingolani, R.

AU - Passaseo, A.

AU - De Vittorio, M.

AU - Della Casa, P.

AU - Ghiglieno, F.

AU - Bianco, L.

PY - 2007/2/15

Y1 - 2007/2/15

N2 - In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.

AB - In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.

KW - In(Ga)As

KW - Modulation

KW - Quantum dots (QDs)

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/33847624183

U2 - 10.1109/LPT.2006.890045

DO - 10.1109/LPT.2006.890045

M3 - Article

AN - SCOPUS:33847624183

SN - 1041-1135

VL - 19

SP - 191

EP - 193

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

ER -

High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this