High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers

Abdelmajid Salhi; L. Martiradonna; G. Visimberga; V. Tasco; L. Fortunato; M. T. Todaro; R. Cingolani; A. Passaseo; M. D. Vittorio

doi:10.1109/LPT.2006.879948

High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers

Abdelmajid Salhi^*
, L. Martiradonna
, G. Visimberga
, V. Tasco
, L. Fortunato
, M. T. Todaro
, R. Cingolani
, A. Passaseo
, M. D. Vittorio

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm^-1was obtained at room temperature corresponding to a modal gain of ∼6 cm^-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm² and 67%, respectively.

Original language	English
Pages (from-to)	1735-1737
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2006.879948
Publication status	Published - 15 Aug 2006
Externally published	Yes

Keywords

In(Ga)As
Modal gain
Quantum dots (QDs)
Semiconductor laser

Access to Document

10.1109/LPT.2006.879948

Cite this

@article{642fbd644cde44f7bc626ad4cd971f03,

title = "High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers",

abstract = "A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm-1was obtained at room temperature corresponding to a modal gain of ∼6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67\%, respectively.",

keywords = "In(Ga)As, Modal gain, Quantum dots (QDs), Semiconductor laser",

author = "Abdelmajid Salhi and L. Martiradonna and G. Visimberga and V. Tasco and L. Fortunato and Todaro, \{M. T.\} and R. Cingolani and A. Passaseo and Vittorio, \{M. D.\}",

year = "2006",

month = aug,

day = "15",

doi = "10.1109/LPT.2006.879948",

language = "English",

volume = "18",

pages = "1735--1737",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "16",

}

TY - JOUR

T1 - High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers

AU - Salhi, Abdelmajid

AU - Martiradonna, L.

AU - Visimberga, G.

AU - Tasco, V.

AU - Fortunato, L.

AU - Todaro, M. T.

AU - Cingolani, R.

AU - Passaseo, A.

AU - Vittorio, M. D.

PY - 2006/8/15

Y1 - 2006/8/15

N2 - A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm-1was obtained at room temperature corresponding to a modal gain of ∼6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively.

AB - A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm-1was obtained at room temperature corresponding to a modal gain of ∼6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively.

KW - In(Ga)As

KW - Modal gain

KW - Quantum dots (QDs)

KW - Semiconductor laser

UR - https://www.scopus.com/pages/publications/33747621856

U2 - 10.1109/LPT.2006.879948

DO - 10.1109/LPT.2006.879948

M3 - Article

AN - SCOPUS:33747621856

SN - 1041-1135

VL - 18

SP - 1735

EP - 1737

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

ER -

High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this