High-gain low-threshold InAs/InGaAs/GaAs quantum dot lasers emitting around 1300 nm

A. Salhi; L. Martiradonna; L. Fortunato; V. Tasco; G. Visimberga; R. Cingolani; A. Passaseo; M. De Vittorio

doi:10.1002/pssc.200671569

High-gain low-threshold InAs/InGaAs/GaAs quantum dot lasers emitting around 1300 nm

A. Salhi^*
, L. Martiradonna
, L. Fortunato
, V. Tasco
, G. Visimberga
, R. Cingolani
, A. Passaseo
, M. De Vittorio

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Three semiconductor laser structures containing 1, 3 and 5 layers of self organized InAs/InGaAs/GaAs quantum dots (QDs) have been grown by Molecular Beam Epitaxy. Broad area lasers were processed from the grown wafers and tested. These structures show a linear increase of the modal gain with the number of QDs layers with an average modal gain per QDs layer of ∼5 cm^-1. A maximum modal gain of 25 cm^-1 was obtained at room temperature (RT) from the sample containing 5 layers of QDs. A transparency current density and a low internal loss value of ∼5.5 A/cm² per QD layer and 1.5 cm^-1 were deduced respectively. For an infinite cavity length a minimum threshold current density of ∼9 A/cm² per QD layer was inferred.

Original language	English
Pages (from-to)	4027-4030
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
Issue number	11
DOIs	https://doi.org/10.1002/pssc.200671569
Publication status	Published - 2006
Externally published	Yes
Event	4th International Conference on Semiconductor Quantum Dots, QD2006 - Chamonix-Mont Blanc, France Duration: 1 May 2006 → 5 May 2006

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title = "High-gain low-threshold InAs/InGaAs/GaAs quantum dot lasers emitting around 1300 nm",

abstract = "Three semiconductor laser structures containing 1, 3 and 5 layers of self organized InAs/InGaAs/GaAs quantum dots (QDs) have been grown by Molecular Beam Epitaxy. Broad area lasers were processed from the grown wafers and tested. These structures show a linear increase of the modal gain with the number of QDs layers with an average modal gain per QDs layer of ∼5 cm-1. A maximum modal gain of 25 cm-1 was obtained at room temperature (RT) from the sample containing 5 layers of QDs. A transparency current density and a low internal loss value of ∼5.5 A/cm2 per QD layer and 1.5 cm-1 were deduced respectively. For an infinite cavity length a minimum threshold current density of ∼9 A/cm2 per QD layer was inferred.",

author = "A. Salhi and L. Martiradonna and L. Fortunato and V. Tasco and G. Visimberga and R. Cingolani and A. Passaseo and Vittorio, \{M. De\}",

year = "2006",

doi = "10.1002/pssc.200671569",

language = "English",

volume = "3",

pages = "4027--4030",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "11",

note = "4th International Conference on Semiconductor Quantum Dots, QD2006 ; Conference date: 01-05-2006 Through 05-05-2006",

}

TY - JOUR

T1 - High-gain low-threshold InAs/InGaAs/GaAs quantum dot lasers emitting around 1300 nm

AU - Salhi, A.

AU - Martiradonna, L.

AU - Fortunato, L.

AU - Tasco, V.

AU - Visimberga, G.

AU - Cingolani, R.

AU - Passaseo, A.

AU - Vittorio, M. De

PY - 2006

Y1 - 2006

N2 - Three semiconductor laser structures containing 1, 3 and 5 layers of self organized InAs/InGaAs/GaAs quantum dots (QDs) have been grown by Molecular Beam Epitaxy. Broad area lasers were processed from the grown wafers and tested. These structures show a linear increase of the modal gain with the number of QDs layers with an average modal gain per QDs layer of ∼5 cm-1. A maximum modal gain of 25 cm-1 was obtained at room temperature (RT) from the sample containing 5 layers of QDs. A transparency current density and a low internal loss value of ∼5.5 A/cm2 per QD layer and 1.5 cm-1 were deduced respectively. For an infinite cavity length a minimum threshold current density of ∼9 A/cm2 per QD layer was inferred.

AB - Three semiconductor laser structures containing 1, 3 and 5 layers of self organized InAs/InGaAs/GaAs quantum dots (QDs) have been grown by Molecular Beam Epitaxy. Broad area lasers were processed from the grown wafers and tested. These structures show a linear increase of the modal gain with the number of QDs layers with an average modal gain per QDs layer of ∼5 cm-1. A maximum modal gain of 25 cm-1 was obtained at room temperature (RT) from the sample containing 5 layers of QDs. A transparency current density and a low internal loss value of ∼5.5 A/cm2 per QD layer and 1.5 cm-1 were deduced respectively. For an infinite cavity length a minimum threshold current density of ∼9 A/cm2 per QD layer was inferred.

UR - https://www.scopus.com/pages/publications/49549106703

U2 - 10.1002/pssc.200671569

DO - 10.1002/pssc.200671569

M3 - Conference article

AN - SCOPUS:49549106703

SN - 1862-6351

VL - 3

SP - 4027

EP - 4030

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 11

T2 - 4th International Conference on Semiconductor Quantum Dots, QD2006

Y2 - 1 May 2006 through 5 May 2006

ER -

High-gain low-threshold InAs/InGaAs/GaAs quantum dot lasers emitting around 1300 nm

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