High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

A. Salhi; L. Fortunato; L. Martiradonna; M. T. Todaro; R. Cingolani; A. Passaseo; M. De Vittorio

doi:10.1088/0268-1242/22/4/017

High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

A. Salhi^*
, L. Fortunato
, L. Martiradonna
, M. T. Todaro
, R. Cingolani
, A. Passaseo
, M. De Vittorio

^*Corresponding author for this work

National Research Council of Italy

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm^-1 and 35 A cm^-2, respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.

Original language	English
Article number	017
Pages (from-to)	396-398
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	22
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/22/4/017
Publication status	Published - 1 Apr 2007
Externally published	Yes

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title = "High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm",

abstract = "High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm-1 and 35 A cm-2, respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90\%.",

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T1 - High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

AU - Salhi, A.

AU - Fortunato, L.

AU - Martiradonna, L.

AU - Todaro, M. T.

AU - Cingolani, R.

AU - Passaseo, A.

AU - De Vittorio, M.

PY - 2007/4/1

Y1 - 2007/4/1

N2 - High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm-1 and 35 A cm-2, respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.

AB - High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm-1 and 35 A cm-2, respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.

UR - https://www.scopus.com/pages/publications/34047193366

U2 - 10.1088/0268-1242/22/4/017

DO - 10.1088/0268-1242/22/4/017

M3 - Article

AN - SCOPUS:34047193366

SN - 0268-1242

VL - 22

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EP - 398

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 017

ER -

High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

Abstract

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