Growth and characterization of CdTe:Ge:Yb

N. V. Sochinskii; E. Saucedo; M. Abellan; J. Rodríguez-Fernández; P. Hidalgo; J. Piqueras; C. M. Ruiz; V. Bermúdez; E. Diéguez

doi:10.1016/j.jcrysgro.2007.11.080

Growth and characterization of CdTe:Ge:Yb

N. V. Sochinskii^*
, E. Saucedo
, M. Abellan
, J. Rodríguez-Fernández
, P. Hidalgo
, J. Piqueras
, C. M. Ruiz
, V. Bermúdez
, E. Diéguez

^*Corresponding author for this work

CSIC - Institute of Microelectronics of Barcelona
Universidad Autónoma de Madrid
Complutense University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×10¹⁷ cm^-3 and co-doped with the rare element Yb at the concentration range from 1×10¹⁷ to 1×10¹⁹ cm^-3. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5×10¹⁸ cm^-3 that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.

Original language	English
Pages (from-to)	2076-2079
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	7-9
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.080
Publication status	Published - Apr 2008
Externally published	Yes

Keywords

A2. Bridgman technique
A3. Vapor-phase epitaxy
B1. CdTe
B2. Semiconducting II-VI

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10.1016/j.jcrysgro.2007.11.080

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title = "Growth and characterization of CdTe:Ge:Yb",

abstract = "Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×1017 cm-3 and co-doped with the rare element Yb at the concentration range from 1×1017 to 1×1019 cm-3. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5×1018 cm-3 that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.",

keywords = "A2. Bridgman technique, A3. Vapor-phase epitaxy, B1. CdTe, B2. Semiconducting II-VI",

author = "Sochinskii, \{N. V.\} and E. Saucedo and M. Abellan and J. Rodr{\'i}guez-Fern{\'a}ndez and P. Hidalgo and J. Piqueras and Ruiz, \{C. M.\} and V. Berm{\'u}dez and E. Di{\'e}guez",

year = "2008",

month = apr,

doi = "10.1016/j.jcrysgro.2007.11.080",

language = "English",

volume = "310",

pages = "2076--2079",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Growth and characterization of CdTe:Ge:Yb

AU - Sochinskii, N. V.

AU - Saucedo, E.

AU - Abellan, M.

AU - Rodríguez-Fernández, J.

AU - Hidalgo, P.

AU - Piqueras, J.

AU - Ruiz, C. M.

AU - Bermúdez, V.

AU - Diéguez, E.

PY - 2008/4

Y1 - 2008/4

N2 - Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×1017 cm-3 and co-doped with the rare element Yb at the concentration range from 1×1017 to 1×1019 cm-3. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5×1018 cm-3 that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.

AB - Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×1017 cm-3 and co-doped with the rare element Yb at the concentration range from 1×1017 to 1×1019 cm-3. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5×1018 cm-3 that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.

KW - A2. Bridgman technique

KW - A3. Vapor-phase epitaxy

KW - B1. CdTe

KW - B2. Semiconducting II-VI

UR - https://www.scopus.com/pages/publications/41449093736

U2 - 10.1016/j.jcrysgro.2007.11.080

DO - 10.1016/j.jcrysgro.2007.11.080

M3 - Article

AN - SCOPUS:41449093736

SN - 0022-0248

VL - 310

SP - 2076

EP - 2079

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7-9

ER -

Growth and characterization of CdTe:Ge:Yb

Abstract

Keywords

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