Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature

Luigi Martiradonna; Egidio De Benedetto; Laura Fortunato; Roberto Cingolani; Massimo De Vittorio; Abdelmajid Salhi; Vittorianna Tasco; Milena De Giorgi; Adriana Passaseo; Giuseppe Visimberga

Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature

Luigi Martiradonna^*, Egidio De Benedetto, Laura Fortunato, Roberto Cingolani, Massimo De Vittorio, Abdelmajid Salhi, Vittorianna Tasco, Milena De Giorgi, Adriana Passaseo, Giuseppe Visimberga

^*Corresponding author for this work

Università di Lecce

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the growth, fabrication and characterization of low threshold laser diodes emitting around 1.3 μm. The quantum dot active region was optimised to get the highest photoluminescence emission and the lowest Full Width at Half Maximum (FWHM). Broad area laser diodes were processed from different samples containing three layers of InAs quantum dots (QDs), and cleaved at different cavity lengths (L_C). Electro-luminescence measurements were performed at room temperature under pulsed excitation. The laser diodes operate at room temperature and emit at 1.32 μm, in the low-absorption spectral window for telecom applications. The characteristic temperature T₀ is in the range 60-77 K and the differential quantum efficiency is 53 %. For an infinite cavity length a threshold current density of 8 A/cm² per QD layer was obtained. Lasing from short-cavity diodes (L_C = 750 μm) was also obtained after e-beam evaporation of high-reflection coatings on one edge of the in-plane laser structure.

Original language	English
Title of host publication	PRIME 2006
Subtitle of host publication	2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings
Pages	397-400
Number of pages	4
Publication status	Published - 2006
Externally published	Yes
Event	PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Otranto, Italy Duration: 12 Jun 2006 → 15 Jun 2006

Publication series

Name	PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings

Conference

Conference	PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics
Country/Territory	Italy
City	Otranto
Period	12/06/06 → 15/06/06

Cite this

Martiradonna, L., De Benedetto, E., Fortunato, L., Cingolani, R., De Vittorio, M., Salhi, A., Tasco, V., De Giorgi, M., Passaseo, A., & Visimberga, G. (2006). Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature. In PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings (pp. 397-400). Article 1689979 (PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings).

Martiradonna, Luigi ; De Benedetto, Egidio ; Fortunato, Laura et al. / Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature. PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings. 2006. pp. 397-400 (PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings).

@inproceedings{c8bec2d7c956443b94be21d33bd77213,

title = "Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature",

abstract = "We report on the growth, fabrication and characterization of low threshold laser diodes emitting around 1.3 μm. The quantum dot active region was optimised to get the highest photoluminescence emission and the lowest Full Width at Half Maximum (FWHM). Broad area laser diodes were processed from different samples containing three layers of InAs quantum dots (QDs), and cleaved at different cavity lengths (LC). Electro-luminescence measurements were performed at room temperature under pulsed excitation. The laser diodes operate at room temperature and emit at 1.32 μm, in the low-absorption spectral window for telecom applications. The characteristic temperature T0 is in the range 60-77 K and the differential quantum efficiency is 53 \%. For an infinite cavity length a threshold current density of 8 A/cm2 per QD layer was obtained. Lasing from short-cavity diodes (LC = 750 μm) was also obtained after e-beam evaporation of high-reflection coatings on one edge of the in-plane laser structure.",

author = "Luigi Martiradonna and \{De Benedetto\}, Egidio and Laura Fortunato and Roberto Cingolani and \{De Vittorio\}, Massimo and Abdelmajid Salhi and Vittorianna Tasco and \{De Giorgi\}, Milena and Adriana Passaseo and Giuseppe Visimberga",

year = "2006",

language = "English",

isbn = "1424401577",

series = "PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings",

pages = "397--400",

booktitle = "PRIME 2006",

note = "PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics ; Conference date: 12-06-2006 Through 15-06-2006",

}

Martiradonna, L, De Benedetto, E, Fortunato, L, Cingolani, R, De Vittorio, M, Salhi, A, Tasco, V, De Giorgi, M, Passaseo, A & Visimberga, G 2006, Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature. in PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings., 1689979, PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings, pp. 397-400, PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics, Otranto, Italy, 12/06/06.

Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature. / Martiradonna, Luigi; De Benedetto, Egidio; Fortunato, Laura et al.
PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings. 2006. p. 397-400 1689979 (PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature

AU - Martiradonna, Luigi

AU - De Benedetto, Egidio

AU - Fortunato, Laura

AU - Cingolani, Roberto

AU - De Vittorio, Massimo

AU - Salhi, Abdelmajid

AU - Tasco, Vittorianna

AU - De Giorgi, Milena

AU - Passaseo, Adriana

AU - Visimberga, Giuseppe

PY - 2006

Y1 - 2006

N2 - We report on the growth, fabrication and characterization of low threshold laser diodes emitting around 1.3 μm. The quantum dot active region was optimised to get the highest photoluminescence emission and the lowest Full Width at Half Maximum (FWHM). Broad area laser diodes were processed from different samples containing three layers of InAs quantum dots (QDs), and cleaved at different cavity lengths (LC). Electro-luminescence measurements were performed at room temperature under pulsed excitation. The laser diodes operate at room temperature and emit at 1.32 μm, in the low-absorption spectral window for telecom applications. The characteristic temperature T0 is in the range 60-77 K and the differential quantum efficiency is 53 %. For an infinite cavity length a threshold current density of 8 A/cm2 per QD layer was obtained. Lasing from short-cavity diodes (LC = 750 μm) was also obtained after e-beam evaporation of high-reflection coatings on one edge of the in-plane laser structure.

AB - We report on the growth, fabrication and characterization of low threshold laser diodes emitting around 1.3 μm. The quantum dot active region was optimised to get the highest photoluminescence emission and the lowest Full Width at Half Maximum (FWHM). Broad area laser diodes were processed from different samples containing three layers of InAs quantum dots (QDs), and cleaved at different cavity lengths (LC). Electro-luminescence measurements were performed at room temperature under pulsed excitation. The laser diodes operate at room temperature and emit at 1.32 μm, in the low-absorption spectral window for telecom applications. The characteristic temperature T0 is in the range 60-77 K and the differential quantum efficiency is 53 %. For an infinite cavity length a threshold current density of 8 A/cm2 per QD layer was obtained. Lasing from short-cavity diodes (LC = 750 μm) was also obtained after e-beam evaporation of high-reflection coatings on one edge of the in-plane laser structure.

UR - https://www.scopus.com/pages/publications/34547382595

M3 - Conference contribution

AN - SCOPUS:34547382595

SN - 1424401577

SN - 9781424401574

T3 - PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings

SP - 397

EP - 400

BT - PRIME 2006

T2 - PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics

Y2 - 12 June 2006 through 15 June 2006

ER -

Martiradonna L, De Benedetto E, Fortunato L, Cingolani R, De Vittorio M, Salhi A et al. Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature. In PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings. 2006. p. 397-400. 1689979. (PRIME 2006: 2nd Conference on Ph.D. Research in MicroElectronics and Electronics - Proceedings).

Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature

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