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Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor

  • Xiaofang Pan*
  • , Xiaojin Zhao
  • , Amine Bermak
  • , Zhiyong Fan
  • *Corresponding author for this work
  • Hong Kong University of Science and Technology
  • Shenzhen University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.

Original languageEnglish
Title of host publicationISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems
PublisherIEEE Computer Society
Pages3270-3273
Number of pages4
ISBN (Electronic)9781467302197
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of
Duration: 20 May 201223 May 2012

Publication series

NameISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems

Conference

Conference2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
Country/TerritoryKorea, Republic of
CitySeoul
Period20/05/1223/05/12

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