Evidence of large high frequency complete phononic band gaps in silicon phononic crystal plates

Saeed Mohammadi; Ali Asghar Eftekhar; Abdelkrim Khelif; William D. Hunt; Ali Adibi

doi:10.1063/1.2939097

Evidence of large high frequency complete phononic band gaps in silicon phononic crystal plates

Saeed Mohammadi^*
, Ali Asghar Eftekhar
, Abdelkrim Khelif
, William D. Hunt
, Ali Adibi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

217 Citations (Scopus)

Abstract

We show the evidence of the existence of large complete phononic band gaps (CPBGs) in two-dimensional phononic crystals (PCs) formed by embedding cylindrical air holes in a solid plate (slab). The PC structure is made by etching a hexagonal array of air holes through a freestanding plate of silicon. A fabrication process compatible with metal-oxide-semiconductor technology is used on silicon-on-insulator substrate to realize the PC devices. Measuring the transmission of elastic waves through eight layers of the hexagonal lattice PC in the K direction, more than 30 dB attenuation is observed at a high frequency; i.e., 134 MHz, with a band gap to midgap ratio of 23%. We show that this frequency region matches very well with the expected CPBG found through theoretical calculations.

Original language	English
Article number	221905
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2939097
Publication status	Published - 2008
Externally published	Yes

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10.1063/1.2939097

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@article{4f14395d97284086b8afe7b3f639afaf,

title = "Evidence of large high frequency complete phononic band gaps in silicon phononic crystal plates",

abstract = "We show the evidence of the existence of large complete phononic band gaps (CPBGs) in two-dimensional phononic crystals (PCs) formed by embedding cylindrical air holes in a solid plate (slab). The PC structure is made by etching a hexagonal array of air holes through a freestanding plate of silicon. A fabrication process compatible with metal-oxide-semiconductor technology is used on silicon-on-insulator substrate to realize the PC devices. Measuring the transmission of elastic waves through eight layers of the hexagonal lattice PC in the K direction, more than 30 dB attenuation is observed at a high frequency; i.e., 134 MHz, with a band gap to midgap ratio of 23\%. We show that this frequency region matches very well with the expected CPBG found through theoretical calculations.",

author = "Saeed Mohammadi and Eftekhar, \{Ali Asghar\} and Abdelkrim Khelif and Hunt, \{William D.\} and Ali Adibi",

year = "2008",

doi = "10.1063/1.2939097",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Evidence of large high frequency complete phononic band gaps in silicon phononic crystal plates

AU - Mohammadi, Saeed

AU - Eftekhar, Ali Asghar

AU - Khelif, Abdelkrim

AU - Hunt, William D.

AU - Adibi, Ali

PY - 2008

Y1 - 2008

N2 - We show the evidence of the existence of large complete phononic band gaps (CPBGs) in two-dimensional phononic crystals (PCs) formed by embedding cylindrical air holes in a solid plate (slab). The PC structure is made by etching a hexagonal array of air holes through a freestanding plate of silicon. A fabrication process compatible with metal-oxide-semiconductor technology is used on silicon-on-insulator substrate to realize the PC devices. Measuring the transmission of elastic waves through eight layers of the hexagonal lattice PC in the K direction, more than 30 dB attenuation is observed at a high frequency; i.e., 134 MHz, with a band gap to midgap ratio of 23%. We show that this frequency region matches very well with the expected CPBG found through theoretical calculations.

AB - We show the evidence of the existence of large complete phononic band gaps (CPBGs) in two-dimensional phononic crystals (PCs) formed by embedding cylindrical air holes in a solid plate (slab). The PC structure is made by etching a hexagonal array of air holes through a freestanding plate of silicon. A fabrication process compatible with metal-oxide-semiconductor technology is used on silicon-on-insulator substrate to realize the PC devices. Measuring the transmission of elastic waves through eight layers of the hexagonal lattice PC in the K direction, more than 30 dB attenuation is observed at a high frequency; i.e., 134 MHz, with a band gap to midgap ratio of 23%. We show that this frequency region matches very well with the expected CPBG found through theoretical calculations.

UR - https://www.scopus.com/pages/publications/44849124380

U2 - 10.1063/1.2939097

DO - 10.1063/1.2939097

M3 - Article

AN - SCOPUS:44849124380

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221905

ER -

Evidence of large high frequency complete phononic band gaps in silicon phononic crystal plates

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