Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)2 solar cells by means of electron beam induced current experiments and modelling

B. Sieber; C. M. Ruiz; V. Bermudez

doi:10.1016/j.spmi.2008.12.016

Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)₂ solar cells by means of electron beam induced current experiments and modelling

B. Sieber^*, C. M. Ruiz, V. Bermudez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Thin-film solar cells with a Cu-based chalcopyrite absorber achieve high conversion efficiencies (up to 20%). Their technology being more cost effective than the crystalline silicon technologies, they are expected to replace Si-based solar cells. But a best cost-performance ratio requires first a knowledge of the parameters which ascertain the electrical quality of the solar cell. The first of them is the minority carrier diffusion length in the absorber and the second one is the collection efficiency of the p - n junction space charge region (SCR) located within the absorber. A low value of at least one of them drastically reduces the efficiency of the cell. In this paper we present an electron-beam-induced-current (EBIC) determination of these two parameters in CIS solar cells.

Original language	English
Pages (from-to)	161-167
Number of pages	7
Journal	Superlattices and Microstructures
Volume	45
Issue number	4-5
DOIs	https://doi.org/10.1016/j.spmi.2008.12.016
Publication status	Published - 2009
Externally published	Yes

Keywords

Chalcopyrite
Diffusion length
Electron beam induced current
Electron microscopy
Semiconductor
Solar cells
pn junction

Access to Document

10.1016/j.spmi.2008.12.016

Cite this

@article{59e0ca8672234e0089e9112bc7b00076,

title = "Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)2 solar cells by means of electron beam induced current experiments and modelling",

abstract = "Thin-film solar cells with a Cu-based chalcopyrite absorber achieve high conversion efficiencies (up to 20\%). Their technology being more cost effective than the crystalline silicon technologies, they are expected to replace Si-based solar cells. But a best cost-performance ratio requires first a knowledge of the parameters which ascertain the electrical quality of the solar cell. The first of them is the minority carrier diffusion length in the absorber and the second one is the collection efficiency of the p - n junction space charge region (SCR) located within the absorber. A low value of at least one of them drastically reduces the efficiency of the cell. In this paper we present an electron-beam-induced-current (EBIC) determination of these two parameters in CIS solar cells.",

keywords = "Chalcopyrite, Diffusion length, Electron beam induced current, Electron microscopy, Semiconductor, Solar cells, pn junction",

author = "B. Sieber and Ruiz, \{C. M.\} and V. Bermudez",

year = "2009",

doi = "10.1016/j.spmi.2008.12.016",

language = "English",

volume = "45",

pages = "161--167",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Elsevier Ltd",

number = "4-5",

}

TY - JOUR

T1 - Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)2 solar cells by means of electron beam induced current experiments and modelling

AU - Sieber, B.

AU - Ruiz, C. M.

AU - Bermudez, V.

PY - 2009

Y1 - 2009

N2 - Thin-film solar cells with a Cu-based chalcopyrite absorber achieve high conversion efficiencies (up to 20%). Their technology being more cost effective than the crystalline silicon technologies, they are expected to replace Si-based solar cells. But a best cost-performance ratio requires first a knowledge of the parameters which ascertain the electrical quality of the solar cell. The first of them is the minority carrier diffusion length in the absorber and the second one is the collection efficiency of the p - n junction space charge region (SCR) located within the absorber. A low value of at least one of them drastically reduces the efficiency of the cell. In this paper we present an electron-beam-induced-current (EBIC) determination of these two parameters in CIS solar cells.

AB - Thin-film solar cells with a Cu-based chalcopyrite absorber achieve high conversion efficiencies (up to 20%). Their technology being more cost effective than the crystalline silicon technologies, they are expected to replace Si-based solar cells. But a best cost-performance ratio requires first a knowledge of the parameters which ascertain the electrical quality of the solar cell. The first of them is the minority carrier diffusion length in the absorber and the second one is the collection efficiency of the p - n junction space charge region (SCR) located within the absorber. A low value of at least one of them drastically reduces the efficiency of the cell. In this paper we present an electron-beam-induced-current (EBIC) determination of these two parameters in CIS solar cells.

KW - Chalcopyrite

KW - Diffusion length

KW - Electron beam induced current

KW - Electron microscopy

KW - Semiconductor

KW - Solar cells

KW - pn junction

UR - https://www.scopus.com/pages/publications/62949160304

U2 - 10.1016/j.spmi.2008.12.016

DO - 10.1016/j.spmi.2008.12.016

M3 - Article

AN - SCOPUS:62949160304

SN - 0749-6036

VL - 45

SP - 161

EP - 167

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-5

ER -

Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)₂ solar cells by means of electron beam induced current experiments and modelling

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this