Abstract
Quantum transport through CNT-fluorographene-Ag junction is studied using density functional theory in combination with the Landauer-Büttiker formalism. Rectifying behavior is obtained for both single and bilayer fluorographene with rectification ratio exceeding 4. The asymmetric conductance originates from bias-dependent charge localization in the system as was revealed in transmission eigenstates analysis. These findings can be useful in developing metal-insulator-metal junctions for high-frequency applications.
| Original language | English |
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| Article number | 17001 |
| Journal | Europhysics Letters |
| Volume | 131 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jul 2020 |