TY - GEN
T1 - Electrodeposited CuIn(S,Se)2 films for low cost high efficiency solar cell applications
T2 - 2007 Spanish Conference on Electron Devices, SCED
AU - Izquierdo-Roca, V.
AU - Alvarez-Garcia, J.
AU - Pérez-Rodríguez, A.
AU - Calvo-Barrio, L.
AU - Romano-Rodríguez, A.
AU - Morante, J. R.
AU - Ramdani, O.
AU - Bermudez, V.
AU - Grand, P. P.
AU - Parissi, L.
AU - Kerrec, O.
PY - 2007
Y1 - 2007
N2 - This paper describes the detailed microstructral characterisation of S-rich CuIn(S,Se)2 absorbers fabricated by single step electrode posil ion (ED) of nanocrystalline CuInSe2 precursors followed by rapid thermal annealing under sulphurising conditions. This has allowed identifying the main secondary phases in the precursors as elemental Se, CuSe and Cu2Se. The Raman spectra from these precursors also show the presence of Cu-poor OVC domains, which contrasts with the Curien conditions used in the ED growth. This has been related to the presence in the annealed layers of In rich secondary phases, which lead to a slightly Cu poor composition. Moreover, the used sulphurising conditions also lead to the formation of a relatively thick MoS2 layer between the absorber and the Mo back contact. The high microcrystalline quality of the layers is likely responsible of the relatively high efficiency value of 11% of the solar cells fabricated with these absorbers.
AB - This paper describes the detailed microstructral characterisation of S-rich CuIn(S,Se)2 absorbers fabricated by single step electrode posil ion (ED) of nanocrystalline CuInSe2 precursors followed by rapid thermal annealing under sulphurising conditions. This has allowed identifying the main secondary phases in the precursors as elemental Se, CuSe and Cu2Se. The Raman spectra from these precursors also show the presence of Cu-poor OVC domains, which contrasts with the Curien conditions used in the ED growth. This has been related to the presence in the annealed layers of In rich secondary phases, which lead to a slightly Cu poor composition. Moreover, the used sulphurising conditions also lead to the formation of a relatively thick MoS2 layer between the absorber and the Mo back contact. The high microcrystalline quality of the layers is likely responsible of the relatively high efficiency value of 11% of the solar cells fabricated with these absorbers.
KW - CuIn(S,Se)
KW - Microstructural analysis
KW - Raman scattering
KW - Thin film solar cells
UR - https://www.scopus.com/pages/publications/35048829851
U2 - 10.1109/SCED.2007.384014
DO - 10.1109/SCED.2007.384014
M3 - Conference contribution
AN - SCOPUS:35048829851
SN - 1424408687
SN - 9781424408689
T3 - 2007 Spanish Conference on Electron Devices, Proceedings
SP - 146
EP - 149
BT - 2007 Spanish Conference on Electron Devices, Proceedings
Y2 - 31 January 2007 through 2 February 2007
ER -