Design and performance evaluation of an enhanced Ag₃CuS₂-based near-infrared photodetector for optoelectronic application

This paper does an extensive analysis via simulations and performance assessment of a high-performance, narrowband Ag₃CuS₂ photodetector (PD) functioning in the near-infrared (NIR) spectrum, constructed with WS₂ and BaSi₂ semiconductors. A thorough evaluation of the device's electrical behavior and optical response, encompassing photocurrent, open-circuit voltage, quantum conversion efficiency, responsivity, and detectivity, is systematically performed throughout its operational wavelength spectrum. An in-depth investigation has been undertaken about the influence of many parameters, including width, carrier density, and defects over multiple layers. The complex interactions between the WS₂/Ag₃CuS₂ and Ag₃CuS₂/BaSi₂ interface properties of the photodetector are further analyzed. The structure utilizing Ag₃CuS₂ photodetector works very well. The photodetector exhibits a voltage of 0.74 V under open-circuit conditions, delivers a current density of 43.79 mA/cm², demonstrates a responsivity of 0.79 A/W, and achieves a detectivity of 3.73 × 10 ¹ ⁴ Jones, along with exceeding 90 % photon-to-electron conversion efficiency in the near-infrared range. These findings highlight the potential of jalpaite as a highly promising candidate in the domain of photodetectors.