CuIn(S,Se)2 Electrodeposited control of defects through Cu/In monitoring.

Carmen Ruiz; Edgardo Saucedo; Pierre Philippe Grand; Ludovic Parissi; Veronica Bermudez

doi:10.1109/PVSC.2008.4922629

CuIn(S,Se)₂ Electrodeposited control of defects through Cu/In monitoring.

Carmen Ruiz
, Edgardo Saucedo
, Pierre Philippe Grand
, Ludovic Parissi
, Veronica Bermudez^*

^*Corresponding author for this work

CNRS

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Single step electrodeposition (ED) of CuInSe₂ precursors followed by RTP annealing under sulphurising conditions constitutes a promising technology for low cost high efficiency solar cell technologies, obtaining efficiencies up to 11%. Further development of these technologies requires for a deeper understanding on the structure of the absorbers as function of the ED parameters, as well as their impact on the recrystallised layers. Some issues related with the nature of the semiconductor have to be analyzed before obtaining high efficiency devices. In particular, electronic state defects in CuIn(S,Se)₂ prepared by electrodeposition have not been widely studied. In this work we report on this electronic state defects and their modification with different the variation of the Cu/In ratio on the absorber layer.

Original language	English
Title of host publication	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922629
Publication status	Published - 2008
Externally published	Yes
Event	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/Territory	United States
City	San Diego, CA
Period	11/05/08 → 16/05/08

Access to Document

10.1109/PVSC.2008.4922629

Cite this

@inproceedings{b7146e6db1cf44cab10e78f5524d6e61,

title = "CuIn(S,Se)2 Electrodeposited control of defects through Cu/In monitoring.",

abstract = "Single step electrodeposition (ED) of CuInSe2 precursors followed by RTP annealing under sulphurising conditions constitutes a promising technology for low cost high efficiency solar cell technologies, obtaining efficiencies up to 11\%. Further development of these technologies requires for a deeper understanding on the structure of the absorbers as function of the ED parameters, as well as their impact on the recrystallised layers. Some issues related with the nature of the semiconductor have to be analyzed before obtaining high efficiency devices. In particular, electronic state defects in CuIn(S,Se)2 prepared by electrodeposition have not been widely studied. In this work we report on this electronic state defects and their modification with different the variation of the Cu/In ratio on the absorber layer.",

author = "Carmen Ruiz and Edgardo Saucedo and Grand, \{Pierre Philippe\} and Ludovic Parissi and Veronica Bermudez",

year = "2008",

doi = "10.1109/PVSC.2008.4922629",

language = "English",

isbn = "9781424416417",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

booktitle = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008",

note = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 ; Conference date: 11-05-2008 Through 16-05-2008",

}

Ruiz, C, Saucedo, E, Grand, PP, Parissi, L & Bermudez, V 2008, CuIn(S,Se)₂ Electrodeposited control of defects through Cu/In monitoring. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922629, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 11/05/08. https://doi.org/10.1109/PVSC.2008.4922629

CuIn(S,Se)₂ Electrodeposited control of defects through Cu/In monitoring. / Ruiz, Carmen; Saucedo, Edgardo; Grand, Pierre Philippe et al.
33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922629 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - CuIn(S,Se)2 Electrodeposited control of defects through Cu/In monitoring.

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AB - Single step electrodeposition (ED) of CuInSe2 precursors followed by RTP annealing under sulphurising conditions constitutes a promising technology for low cost high efficiency solar cell technologies, obtaining efficiencies up to 11%. Further development of these technologies requires for a deeper understanding on the structure of the absorbers as function of the ED parameters, as well as their impact on the recrystallised layers. Some issues related with the nature of the semiconductor have to be analyzed before obtaining high efficiency devices. In particular, electronic state defects in CuIn(S,Se)2 prepared by electrodeposition have not been widely studied. In this work we report on this electronic state defects and their modification with different the variation of the Cu/In ratio on the absorber layer.

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