TY - JOUR
T1 - CuAl xGa 1-xSe 2 thin films for photovoltaic applications
T2 - Structural, electrical and morphological analysis
AU - López-García, J.
AU - Trigo, J. F.
AU - Ferrer, I. J.
AU - Guillén, C.
AU - Herrero, J.
PY - 2012/9
Y1 - 2012/9
N2 - Wide-bandgap quaternary semiconductor chalcopyrites can be of interest for photovoltaic application. Novel CuAl xGa 1-xSe 2 (CAGS) (0 ≤ x ≤ 1) thin films have been achieved by selenization of evaporated metallic precursor layers in a wide range of Al content and for several film thicknesses. Influence of Al incorporation, x, and film thickness on the structural, electrical and morphological properties of the samples have been studied. Polycrystalline CAGS thin films have been obtained reproducibly with chalcopyrite structure. The lattice parameters, a and c, and the average crystallite size decreased with the increase of Al amount, x. All films showed random orientation with the degree of randomness reduced for increasing x values. All samples show photoconductivity and resistivities ranging from 10 1 to 10 4 Ω cm depending on the film thickness and x value. Resistivity values increase and thermoelectric coefficient decreases with the increase of Al proportion, x. Surface morphology was studied by SEM images and roughness measurements. Grain size and the arithmetic average roughness decreases with the increase of x and with the decrease of film thickness.
AB - Wide-bandgap quaternary semiconductor chalcopyrites can be of interest for photovoltaic application. Novel CuAl xGa 1-xSe 2 (CAGS) (0 ≤ x ≤ 1) thin films have been achieved by selenization of evaporated metallic precursor layers in a wide range of Al content and for several film thicknesses. Influence of Al incorporation, x, and film thickness on the structural, electrical and morphological properties of the samples have been studied. Polycrystalline CAGS thin films have been obtained reproducibly with chalcopyrite structure. The lattice parameters, a and c, and the average crystallite size decreased with the increase of Al amount, x. All films showed random orientation with the degree of randomness reduced for increasing x values. All samples show photoconductivity and resistivities ranging from 10 1 to 10 4 Ω cm depending on the film thickness and x value. Resistivity values increase and thermoelectric coefficient decreases with the increase of Al proportion, x. Surface morphology was studied by SEM images and roughness measurements. Grain size and the arithmetic average roughness decreases with the increase of x and with the decrease of film thickness.
KW - A. Chalcogenides
KW - A. Semiconductors
KW - A. Thin films
KW - D. Crystal structure
KW - D. Electrical properties
UR - https://www.scopus.com/pages/publications/84864629859
U2 - 10.1016/j.materresbull.2012.05.004
DO - 10.1016/j.materresbull.2012.05.004
M3 - Article
AN - SCOPUS:84864629859
SN - 0025-5408
VL - 47
SP - 2518
EP - 2524
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 9
ER -