Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

A. I. Abutaha; S. R. Sarath Kumar; H. N. Alshareef

doi:10.1063/1.4790644

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

A. I. Abutaha, S. R. Sarath Kumar, H. N. Alshareef^*

^*Corresponding author for this work

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO₃ (100) substrates. The change in surface termination of the LaAlO₃ substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m^-1 K ^-1 at 740 K.

Original language	English
Article number	053507
Journal	Applied Physics Letters
Volume	102
Issue number	5
DOIs	https://doi.org/10.1063/1.4790644
Publication status	Published - 4 Feb 2013
Externally published	Yes

Access to Document

10.1063/1.4790644

Cite this

@article{1b66b350cab6455c8530a7613ca53968,

title = "Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films",

abstract = "We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m-1 K -1 at 740 K.",

author = "Abutaha, \{A. I.\} and \{Sarath Kumar\}, \{S. R.\} and Alshareef, \{H. N.\}",

year = "2013",

month = feb,

day = "4",

doi = "10.1063/1.4790644",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

AU - Abutaha, A. I.

AU - Sarath Kumar, S. R.

AU - Alshareef, H. N.

PY - 2013/2/4

Y1 - 2013/2/4

N2 - We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m-1 K -1 at 740 K.

AB - We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m-1 K -1 at 740 K.

UR - https://www.scopus.com/pages/publications/84874027775

U2 - 10.1063/1.4790644

DO - 10.1063/1.4790644

M3 - Article

AN - SCOPUS:84874027775

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053507

ER -

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this