CESIUM-NIOBIUM-CHALCOGENIDE COMPOUNDS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

Fadwa El-Mellouhi; Heesoo Park; Nouar Tabet; Fahhad Alharbi; Stefano Sanvito; Fadwa El-Mellouhi; Heesoo Park; Nouar Tabet; Fahhad Alharbi; Stefano Sanvito

CESIUM-NIOBIUM-CHALCOGENIDE COMPOUNDS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

Fadwa El-Mellouhi (Inventor)
, Heesoo Park (Inventor)
, Nouar Tabet (Inventor)
, Fahhad Alharbi (Inventor)
, Stefano Sanvito (Inventor)
, Fadwa El-Mellouhi (Inventor)
, Heesoo Park (Inventor)
, Nouar Tabet (Inventor)
, Fahhad Alharbi (Inventor)
, Stefano Sanvito (Inventor)

QEERI - Energy Center

Trinity College Dublin
Qatar Foundation for Education, Science, and Community Development

Research output: Patent

Abstract

Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

Original language	English
Patent number	US2021269326
IPC	H01L 31/ 036 A I
Priority date	5/02/19
Publication status	Published - 2 Sept 2021

Cite this

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title = "CESIUM-NIOBIUM-CHALCOGENIDE COMPOUNDS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME",

abstract = "Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.",

author = "Fadwa El-Mellouhi and Heesoo Park and Nouar Tabet and Fahhad Alharbi and Stefano Sanvito and Fadwa El-Mellouhi and Heesoo Park and Nouar Tabet and Fahhad Alharbi and Stefano Sanvito",

year = "2021",

month = sep,

day = "2",

language = "English",

type = "Patent",

note = "US2021269326; H01L 31/ 036 A I",

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TY - PAT

T1 - CESIUM-NIOBIUM-CHALCOGENIDE COMPOUNDS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

AU - El-Mellouhi, Fadwa

AU - Park, Heesoo

AU - Tabet, Nouar

AU - Alharbi, Fahhad

AU - Sanvito, Stefano

AU - El-Mellouhi, Fadwa

AU - Park, Heesoo

AU - Tabet, Nouar

AU - Alharbi, Fahhad

AU - Sanvito, Stefano

PY - 2021/9/2

Y1 - 2021/9/2

N2 - Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

AB - Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

M3 - Patent

M1 - US2021269326

ER -

CESIUM-NIOBIUM-CHALCOGENIDE COMPOUNDS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

Abstract

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