Abstract
Yb-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb3+ ions has been detected.
| Original language | English |
|---|---|
| Pages (from-to) | 108-111 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering: B |
| Volume | 121 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 25 Jul 2005 |
| Externally published | Yes |
Keywords
- Cathodoluminescence
- Gallium antimonide
- Rare earth doping