Cathodoluminescence study of ytterbium doped GaSb

P. Hidalgo, B. Méndez*, C. Ruiz, V. Bermúdez, J. Piqueras, E. Diéguez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Yb-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb3+ ions has been detected.

Original languageEnglish
Pages (from-to)108-111
Number of pages4
JournalMaterials Science and Engineering: B
Volume121
Issue number1-2
DOIs
Publication statusPublished - 25 Jul 2005
Externally publishedYes

Keywords

  • Cathodoluminescence
  • Gallium antimonide
  • Rare earth doping

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