Atomic Layer Deposited AlxNiyO as Hole Selective Contact for Silicon Solar Cells

Tian Zhang; Md Anower Hossain; Kean Thong Khoo; Chang Yeh Lee; Yahya Zakaria; Amir A. Abdallah; Bram Hoex

doi:10.1109/PVSC40753.2019.8980522

Atomic Layer Deposited Al_xNi_yO as Hole Selective Contact for Silicon Solar Cells

Tian Zhang, Md Anower Hossain, Kean Thong Khoo, Chang Yeh Lee, Yahya Zakaria, Amir A. Abdallah, Bram Hoex

QEERI - Energy Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Atomic layer deposited Al_xNi_yO with different concentrations of Al are investigated as hole selective contact for crystalline silicon solar cells. Spectroscopic ellipsometry reveals that these Al_xNi_yO films have a bandgap of 2.8-3.3 eV. This incorporation of Al increases the hole selectivity of the NiO film in a way that the contact resistivity of the Al_xNi_yO films with Si is significantly lower. These results are consistent with density functional theory calculations indicating the presence of shallow defects in the bandgap of Al_xNi_yO which contribute to the improved hole selectivity. This work demonstrates the potential of Al_xNi_yO as a hole-selective contact for crystalline solar cells.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2338-2341
Number of pages	4
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980522
Publication status	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Keywords

atomic layer deposition
hole selective contact
photovoltaic cells
silicon

Access to Document

10.1109/PVSC40753.2019.8980522

Cite this

Zhang, T., Hossain, M. A., Thong Khoo, K., Lee, C. Y., Zakaria, Y., Abdallah, A. A., & Hoex, B. (2019). Atomic Layer Deposited Al_xNi_yO as Hole Selective Contact for Silicon Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 2338-2341). Article 8980522 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980522

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title = "Atomic Layer Deposited AlxNiyO as Hole Selective Contact for Silicon Solar Cells",

abstract = "Atomic layer deposited AlxNiyO with different concentrations of Al are investigated as hole selective contact for crystalline silicon solar cells. Spectroscopic ellipsometry reveals that these AlxNiyO films have a bandgap of 2.8-3.3 eV. This incorporation of Al increases the hole selectivity of the NiO film in a way that the contact resistivity of the AlxNiyO films with Si is significantly lower. These results are consistent with density functional theory calculations indicating the presence of shallow defects in the bandgap of AlxNiyO which contribute to the improved hole selectivity. This work demonstrates the potential of AlxNiyO as a hole-selective contact for crystalline solar cells.",

keywords = "atomic layer deposition, hole selective contact, photovoltaic cells, silicon",

author = "Tian Zhang and Hossain, \{Md Anower\} and \{Thong Khoo\}, Kean and Lee, \{Chang Yeh\} and Yahya Zakaria and Abdallah, \{Amir A.\} and Bram Hoex",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980522",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2338--2341",

booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

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Zhang, T, Hossain, MA, Thong Khoo, K, Lee, CY, Zakaria, Y, Abdallah, AA & Hoex, B 2019, Atomic Layer Deposited Al_xNi_yO as Hole Selective Contact for Silicon Solar Cells. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980522, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2338-2341, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19. https://doi.org/10.1109/PVSC40753.2019.8980522

Atomic Layer Deposited Al_xNi_yO as Hole Selective Contact for Silicon Solar Cells. / Zhang, Tian; Hossain, Md Anower; Thong Khoo, Kean et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2338-2341 8980522 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Atomic Layer Deposited AlxNiyO as Hole Selective Contact for Silicon Solar Cells

AU - Zhang, Tian

AU - Hossain, Md Anower

AU - Thong Khoo, Kean

AU - Lee, Chang Yeh

AU - Zakaria, Yahya

AU - Abdallah, Amir A.

AU - Hoex, Bram

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N2 - Atomic layer deposited AlxNiyO with different concentrations of Al are investigated as hole selective contact for crystalline silicon solar cells. Spectroscopic ellipsometry reveals that these AlxNiyO films have a bandgap of 2.8-3.3 eV. This incorporation of Al increases the hole selectivity of the NiO film in a way that the contact resistivity of the AlxNiyO films with Si is significantly lower. These results are consistent with density functional theory calculations indicating the presence of shallow defects in the bandgap of AlxNiyO which contribute to the improved hole selectivity. This work demonstrates the potential of AlxNiyO as a hole-selective contact for crystalline solar cells.

AB - Atomic layer deposited AlxNiyO with different concentrations of Al are investigated as hole selective contact for crystalline silicon solar cells. Spectroscopic ellipsometry reveals that these AlxNiyO films have a bandgap of 2.8-3.3 eV. This incorporation of Al increases the hole selectivity of the NiO film in a way that the contact resistivity of the AlxNiyO films with Si is significantly lower. These results are consistent with density functional theory calculations indicating the presence of shallow defects in the bandgap of AlxNiyO which contribute to the improved hole selectivity. This work demonstrates the potential of AlxNiyO as a hole-selective contact for crystalline solar cells.

KW - atomic layer deposition

KW - hole selective contact

KW - photovoltaic cells

KW - silicon

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Zhang T, Hossain MA, Thong Khoo K, Lee CY, Zakaria Y, Abdallah AA et al. Atomic Layer Deposited Al_xNi_yO as Hole Selective Contact for Silicon Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2338-2341. 8980522. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980522