TY - JOUR
T1 - Annealing of Silicon Heterojunction Solar Cells
T2 - Interplay of Solar Cell and Indium Tin Oxide Properties
AU - Haschke, Jan
AU - Lemerle, Raphaël
AU - Aïssa, Brahim
AU - Abdallah, Amir A.
AU - Kivambe, Maulid M.
AU - Boccard, Mathieu
AU - Ballif, Christophe
N1 - Publisher Copyright:
© 2011-2012 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - In this paper, we report the evolution of silicon heterojunction solar cell properties focusing, in particular, on the indium tin oxide (ITO) layers upon consecutive thermal annealing. We find that the charge carrier density Ne of the ITO increases with higher thermal budget, while the carrier mobility remains constant. For the solar cells, their series resistance at the maximum power point RMPPS first decreases due to the reduction of the ITO's sheet resistance. With further annealing, RMPPS increases again. As all monitored RS components decrease, we attribute this to an increase of the contact resistance. The implied VOC and the implied fill factor both slightly degrade for annealing temperatures above 190 °C for our layers. This, as well as the change in Ne of the ITO, must be carefully considered when optimizing the thermal budget needed, e.g., for sputter damage or screen-printing paste curing.
AB - In this paper, we report the evolution of silicon heterojunction solar cell properties focusing, in particular, on the indium tin oxide (ITO) layers upon consecutive thermal annealing. We find that the charge carrier density Ne of the ITO increases with higher thermal budget, while the carrier mobility remains constant. For the solar cells, their series resistance at the maximum power point RMPPS first decreases due to the reduction of the ITO's sheet resistance. With further annealing, RMPPS increases again. As all monitored RS components decrease, we attribute this to an increase of the contact resistance. The implied VOC and the implied fill factor both slightly degrade for annealing temperatures above 190 °C for our layers. This, as well as the change in Ne of the ITO, must be carefully considered when optimizing the thermal budget needed, e.g., for sputter damage or screen-printing paste curing.
KW - Indium tin oxide (ITO)
KW - loss analysis
KW - refractive index
KW - selectivity
KW - series resistance
KW - silicon heterojunction (SHJ)
KW - sputter damage
UR - https://www.scopus.com/pages/publications/85071585959
U2 - 10.1109/JPHOTOV.2019.2924389
DO - 10.1109/JPHOTOV.2019.2924389
M3 - Article
AN - SCOPUS:85071585959
SN - 2156-3381
VL - 9
SP - 1202
EP - 1207
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 5
M1 - 8771183
ER -