Analysis of Er incorporation on GaSb substrates by diffusion

C. M. Ruiz; J. L. Plaza; V. Bermúdez; E. Diéguez

doi:10.1002/crat.200410279

Analysis of Er incorporation on GaSb substrates by diffusion

C. M. Ruiz^*, J. L. Plaza, V. Bermúdez, E. Diéguez

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

1 Citation (Scopus)

Abstract

Nanoscale Physics Research Laboratory, School of Physics and Astronomy The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK 10.1002/crat.200410279 On this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er activation, but crystal quality decreases severally. Surface analysis of diffused sample shows the presence of holes all over the surface.

Original language	English
Pages (from-to)	932-935
Number of pages	4
Journal	Crystal Research and Technology
Volume	39
Issue number	10
DOIs	https://doi.org/10.1002/crat.200410279
Publication status	Published - Oct 2004
Externally published	Yes

Keywords

Diffusion
Er incorporation
GaSb substrates

Access to Document

10.1002/crat.200410279

Cite this

@article{398218250a78419080699441406558e4,

title = "Analysis of Er incorporation on GaSb substrates by diffusion",

abstract = "Nanoscale Physics Research Laboratory, School of Physics and Astronomy The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK 10.1002/crat.200410279 On this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er activation, but crystal quality decreases severally. Surface analysis of diffused sample shows the presence of holes all over the surface.",

keywords = "Diffusion, Er incorporation, GaSb substrates",

author = "Ruiz, \{C. M.\} and Plaza, \{J. L.\} and V. Berm{\'u}dez and E. Di{\'e}guez",

year = "2004",

month = oct,

doi = "10.1002/crat.200410279",

language = "English",

volume = "39",

pages = "932--935",

journal = "Crystal Research and Technology",

issn = "0232-1300",

publisher = "John Wiley \& Sons Inc.",

number = "10",

}

TY - JOUR

T1 - Analysis of Er incorporation on GaSb substrates by diffusion

AU - Ruiz, C. M.

AU - Plaza, J. L.

AU - Bermúdez, V.

AU - Diéguez, E.

PY - 2004/10

Y1 - 2004/10

N2 - Nanoscale Physics Research Laboratory, School of Physics and Astronomy The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK 10.1002/crat.200410279 On this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er activation, but crystal quality decreases severally. Surface analysis of diffused sample shows the presence of holes all over the surface.

AB - Nanoscale Physics Research Laboratory, School of Physics and Astronomy The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK 10.1002/crat.200410279 On this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er activation, but crystal quality decreases severally. Surface analysis of diffused sample shows the presence of holes all over the surface.

KW - Diffusion

KW - Er incorporation

KW - GaSb substrates

UR - https://www.scopus.com/pages/publications/7544250777

U2 - 10.1002/crat.200410279

DO - 10.1002/crat.200410279

M3 - Review article

AN - SCOPUS:7544250777

SN - 0232-1300

VL - 39

SP - 932

EP - 935

JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 10

ER -

Analysis of Er incorporation on GaSb substrates by diffusion

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this