Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition

A. Darga; D. Mencaraglia; Z. Djebbour; A. Migan Dubois; V. Bermúdez; J. P. Connolly; C. M. Ruiz; J. F. Guillemolles

doi:10.1016/j.tsf.2007.12.006

Analysis of electronic transport properties of thin film CuIn(S,Se)₂ solar cells based on electrodeposition

A. Darga^*, D. Mencaraglia, Z. Djebbour, A. Migan Dubois, V. Bermúdez, J. P. Connolly, C. M. Ruiz, J. F. Guillemolles

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Electrodeposited CuIn(S,Se)₂ based solar cells with efficiencies of 10.4% and 7.1% are reported. Their electronic transport properties are examined as a function of temperature by admittance spectroscopy and dark-current-voltage measurements (J (V, T)). For all devices, admittance spectroscopy reveals two relative shallow defect levels located at 0.1 eV and 0.23 eV, respectively. For the device showing the lowest efficiency, an additional deep defect at 0.51 eV is probed. The presence of this defect is well correlated with the J (V, T) results which reveal an enhancement of a second recombination mechanism that we identify as an additional tunneling-assisted recombination path.

Original language	English
Pages (from-to)	6999-7003
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2007.12.006
Publication status	Published - 30 Aug 2008
Externally published	Yes

Keywords

Admittance spectroscopy
CdS
Electrodeposited CISSe
Electronic transport

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10.1016/j.tsf.2007.12.006

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title = "Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition",

abstract = "Electrodeposited CuIn(S,Se)2 based solar cells with efficiencies of 10.4\% and 7.1\% are reported. Their electronic transport properties are examined as a function of temperature by admittance spectroscopy and dark-current-voltage measurements (J (V, T)). For all devices, admittance spectroscopy reveals two relative shallow defect levels located at 0.1 eV and 0.23 eV, respectively. For the device showing the lowest efficiency, an additional deep defect at 0.51 eV is probed. The presence of this defect is well correlated with the J (V, T) results which reveal an enhancement of a second recombination mechanism that we identify as an additional tunneling-assisted recombination path.",

keywords = "Admittance spectroscopy, CdS, Electrodeposited CISSe, Electronic transport",

author = "A. Darga and D. Mencaraglia and Z. Djebbour and \{Migan Dubois\}, A. and V. Berm{\'u}dez and Connolly, \{J. P.\} and Ruiz, \{C. M.\} and Guillemolles, \{J. F.\}",

year = "2008",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2007.12.006",

language = "English",

volume = "516",

pages = "6999--7003",

journal = "Thin Solid Films",

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number = "20",

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TY - JOUR

T1 - Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition

AU - Darga, A.

AU - Mencaraglia, D.

AU - Djebbour, Z.

AU - Migan Dubois, A.

AU - Bermúdez, V.

AU - Connolly, J. P.

AU - Ruiz, C. M.

AU - Guillemolles, J. F.

PY - 2008/8/30

Y1 - 2008/8/30

N2 - Electrodeposited CuIn(S,Se)2 based solar cells with efficiencies of 10.4% and 7.1% are reported. Their electronic transport properties are examined as a function of temperature by admittance spectroscopy and dark-current-voltage measurements (J (V, T)). For all devices, admittance spectroscopy reveals two relative shallow defect levels located at 0.1 eV and 0.23 eV, respectively. For the device showing the lowest efficiency, an additional deep defect at 0.51 eV is probed. The presence of this defect is well correlated with the J (V, T) results which reveal an enhancement of a second recombination mechanism that we identify as an additional tunneling-assisted recombination path.

AB - Electrodeposited CuIn(S,Se)2 based solar cells with efficiencies of 10.4% and 7.1% are reported. Their electronic transport properties are examined as a function of temperature by admittance spectroscopy and dark-current-voltage measurements (J (V, T)). For all devices, admittance spectroscopy reveals two relative shallow defect levels located at 0.1 eV and 0.23 eV, respectively. For the device showing the lowest efficiency, an additional deep defect at 0.51 eV is probed. The presence of this defect is well correlated with the J (V, T) results which reveal an enhancement of a second recombination mechanism that we identify as an additional tunneling-assisted recombination path.

KW - Admittance spectroscopy

KW - CdS

KW - Electrodeposited CISSe

KW - Electronic transport

UR - https://www.scopus.com/pages/publications/45849133417

U2 - 10.1016/j.tsf.2007.12.006

DO - 10.1016/j.tsf.2007.12.006

M3 - Article

AN - SCOPUS:45849133417

SN - 0040-6090

VL - 516

SP - 6999

EP - 7003

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -

Analysis of electronic transport properties of thin film CuIn(S,Se)₂ solar cells based on electrodeposition

Abstract

Keywords

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