TY - GEN
T1 - Alternative p-type metal oxide films as hole transport materials for photovoltaic devices
AU - Hossain, Mohammad Istiaque
AU - Aissa, Brahim
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - In this work, we present the study of inorganic p- type metal oxide films for use as charge transport materials in photovoltaic cells. Potential use of Molybdenum oxide (MoOx) and Nickel oxide (NiOx) as hole transport materials (HTM) was explored using SCAPS-1D simulation software. The films were deposited by room temperature reactive evaporation of Mo, and Ni metal, respectively in an oxygen environment. The films were nominally 100 nm thick and were amorphous. They were annealed at 200°C to improve crystallinity and were characterized for electrical, optical and morphological properties.
AB - In this work, we present the study of inorganic p- type metal oxide films for use as charge transport materials in photovoltaic cells. Potential use of Molybdenum oxide (MoOx) and Nickel oxide (NiOx) as hole transport materials (HTM) was explored using SCAPS-1D simulation software. The films were deposited by room temperature reactive evaporation of Mo, and Ni metal, respectively in an oxygen environment. The films were nominally 100 nm thick and were amorphous. They were annealed at 200°C to improve crystallinity and were characterized for electrical, optical and morphological properties.
UR - https://www.scopus.com/pages/publications/105016224077
U2 - 10.1109/PVSC59419.2025.11132900
DO - 10.1109/PVSC59419.2025.11132900
M3 - Conference contribution
AN - SCOPUS:105016224077
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 73
EP - 75
BT - 2025 IEEE 53rd Photovoltaic Specialists Conference, PVSC 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 53rd IEEE Photovoltaic Specialists Conference, PVSC 2025
Y2 - 8 June 2025 through 13 June 2025
ER -