Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN Multiple-Quantum-Well LEDs

Pawan Mishra; Bilal Janjua; Tien Khee Ng; Chao Shen; Abdelmajid Salhi; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi

doi:10.1109/JPHOT.2015.2430017

Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN Multiple-Quantum-Well LEDs

Pawan Mishra
, Bilal Janjua
, Tien Khee Ng
, Chao Shen
, Abdelmajid Salhi
, Ahmed Y. Alyamani
, Munir M. El-Desouki
, Boon S. Ooi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We investigated the design and growth of compositionally graded InGaN multiple-quantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the optimized graded-MQW design, i.e., In₀→ xGa₁→_(1-x)N/In_xGa_(1-x) N/In_x→0Ga_(1-x)→ 1N, as compared with the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles, were numerically investigated for comparison. The stepped- and graded-MQW-LEDs were then grown using plasma-assisted molecular beam epitaxy through surface-stoichiometry optimization based on reflection high-energy electron diffraction in situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 and 275 A/cm2 $, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, which is consistent with the numerical simulation.

Original language	English
Article number	7102690
Journal	IEEE Photonics Journal
Volume	7
Issue number	3
DOIs	https://doi.org/10.1109/JPHOT.2015.2430017
Publication status	Published - 1 Jun 2015
Externally published	Yes

Keywords

Compositional grading
Light emitting diodes (LEDs)
polarization field
semiconductor quantum well
solid state lighting
wavefunction overlap

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10.1109/JPHOT.2015.2430017

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@article{92c179471bd845cd92876ec4fc006a62,

title = "Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN Multiple-Quantum-Well LEDs",

abstract = "We investigated the design and growth of compositionally graded InGaN multiple-quantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the optimized graded-MQW design, i.e., In0→ xGa1→(1-x)N/InxGa(1-x) N/Inx→0Ga(1-x)→ 1N, as compared with the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles, were numerically investigated for comparison. The stepped- and graded-MQW-LEDs were then grown using plasma-assisted molecular beam epitaxy through surface-stoichiometry optimization based on reflection high-energy electron diffraction in situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 and 275 A/cm2 \$, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, which is consistent with the numerical simulation.",

keywords = "Compositional grading, Light emitting diodes (LEDs), polarization field, semiconductor quantum well, solid state lighting, wavefunction overlap",

author = "Pawan Mishra and Bilal Janjua and Ng, \{Tien Khee\} and Chao Shen and Abdelmajid Salhi and Alyamani, \{Ahmed Y.\} and El-Desouki, \{Munir M.\} and Ooi, \{Boon S.\}",

note = "Publisher Copyright: {\textcopyright} 2009-2012 IEEE.",

year = "2015",

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doi = "10.1109/JPHOT.2015.2430017",

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AU - Mishra, Pawan

AU - Janjua, Bilal

AU - Ng, Tien Khee

AU - Shen, Chao

AU - Salhi, Abdelmajid

AU - Alyamani, Ahmed Y.

AU - El-Desouki, Munir M.

AU - Ooi, Boon S.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We investigated the design and growth of compositionally graded InGaN multiple-quantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the optimized graded-MQW design, i.e., In0→ xGa1→(1-x)N/InxGa(1-x) N/Inx→0Ga(1-x)→ 1N, as compared with the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles, were numerically investigated for comparison. The stepped- and graded-MQW-LEDs were then grown using plasma-assisted molecular beam epitaxy through surface-stoichiometry optimization based on reflection high-energy electron diffraction in situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 and 275 A/cm2 $, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, which is consistent with the numerical simulation.

AB - We investigated the design and growth of compositionally graded InGaN multiple-quantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the optimized graded-MQW design, i.e., In0→ xGa1→(1-x)N/InxGa(1-x) N/Inx→0Ga(1-x)→ 1N, as compared with the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles, were numerically investigated for comparison. The stepped- and graded-MQW-LEDs were then grown using plasma-assisted molecular beam epitaxy through surface-stoichiometry optimization based on reflection high-energy electron diffraction in situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 and 275 A/cm2 $, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, which is consistent with the numerical simulation.

KW - Compositional grading

KW - Light emitting diodes (LEDs)

KW - polarization field

KW - semiconductor quantum well

KW - solid state lighting

KW - wavefunction overlap

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DO - 10.1109/JPHOT.2015.2430017

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SN - 1943-0655

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JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

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M1 - 7102690

ER -

Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN Multiple-Quantum-Well LEDs

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Keywords

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