A Sub-1/°C Bandgap Voltage Reference with High-Order Temperature Compensation in 0.18-μm CMOS Process

Shalin Huang; Mingdong Li; Huan Li; Peng Yin; Zhou Shu; Amine Bermak; Fang Tang

doi:10.1109/TCSI.2021.3139908

A Sub-1/°C Bandgap Voltage Reference with High-Order Temperature Compensation in 0.18-μm CMOS Process

Shalin Huang
, Mingdong Li
, Huan Li
, Peng Yin
, Zhou Shu^*
, Amine Bermak
, Fang Tang^*

^*Corresponding author for this work

CSE Information & Computing Technology

Chongqing University

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

This paper presents a high-precision bandgap voltage reference (BGR) with high-order temperature compensation. The compensation signal is generated by using both strong-inversion MOSFETs and Bipolar Junction transistors (BJTs), which cancels the high-order nonlinear term T\ln (T) in the BJT base-emitter voltage (VBE), and thus a low temperature coefficient (TC) over a wide temperature range is achieved. The proposed BGR circuit is fabricated in a 0.18-μm} CMOS process with an active area of 0.256 mm2 and a max power consumption of 1.35 mW. A minimum TC of 0.706 ppm/°C from 25°C to 125 °C is achieved after an 8-bit resistance trimming. The line sensitivity is 0.0146%/V operating from 3.2 V to 3.7 V. The BGR achieves a power supply rejection (PSR) of-63.4 dB and a noise spectrum density of 0.92 μ VlHz at 10 Hz.

Original language	English
Pages (from-to)	1408-1416
Number of pages	9
Journal	IEEE Transactions on Circuits and Systems I: Regular Papers
Volume	69
Issue number	4
DOIs	https://doi.org/10.1109/TCSI.2021.3139908
Publication status	Published - 1 Apr 2022

Keywords

Bandgap voltage reference
High-order temperature compensation
Temperature coefficient

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title = "A Sub-1/°C Bandgap Voltage Reference with High-Order Temperature Compensation in 0.18-μm CMOS Process",

abstract = "This paper presents a high-precision bandgap voltage reference (BGR) with high-order temperature compensation. The compensation signal is generated by using both strong-inversion MOSFETs and Bipolar Junction transistors (BJTs), which cancels the high-order nonlinear term T\textbackslash{}ln (T) in the BJT base-emitter voltage (VBE), and thus a low temperature coefficient (TC) over a wide temperature range is achieved. The proposed BGR circuit is fabricated in a 0.18-μm\} CMOS process with an active area of 0.256 mm2 and a max power consumption of 1.35 mW. A minimum TC of 0.706 ppm/°C from 25°C to 125 °C is achieved after an 8-bit resistance trimming. The line sensitivity is 0.0146\%/V operating from 3.2 V to 3.7 V. The BGR achieves a power supply rejection (PSR) of-63.4 dB and a noise spectrum density of 0.92 μ VlHz at 10 Hz.",

keywords = "Bandgap voltage reference, High-order temperature compensation, Temperature coefficient",

author = "Shalin Huang and Mingdong Li and Huan Li and Peng Yin and Zhou Shu and Amine Bermak and Fang Tang",

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AU - Huang, Shalin

AU - Li, Mingdong

AU - Li, Huan

AU - Yin, Peng

AU - Shu, Zhou

AU - Bermak, Amine

AU - Tang, Fang

PY - 2022/4/1

Y1 - 2022/4/1

N2 - This paper presents a high-precision bandgap voltage reference (BGR) with high-order temperature compensation. The compensation signal is generated by using both strong-inversion MOSFETs and Bipolar Junction transistors (BJTs), which cancels the high-order nonlinear term T\ln (T) in the BJT base-emitter voltage (VBE), and thus a low temperature coefficient (TC) over a wide temperature range is achieved. The proposed BGR circuit is fabricated in a 0.18-μm} CMOS process with an active area of 0.256 mm2 and a max power consumption of 1.35 mW. A minimum TC of 0.706 ppm/°C from 25°C to 125 °C is achieved after an 8-bit resistance trimming. The line sensitivity is 0.0146%/V operating from 3.2 V to 3.7 V. The BGR achieves a power supply rejection (PSR) of-63.4 dB and a noise spectrum density of 0.92 μ VlHz at 10 Hz.

AB - This paper presents a high-precision bandgap voltage reference (BGR) with high-order temperature compensation. The compensation signal is generated by using both strong-inversion MOSFETs and Bipolar Junction transistors (BJTs), which cancels the high-order nonlinear term T\ln (T) in the BJT base-emitter voltage (VBE), and thus a low temperature coefficient (TC) over a wide temperature range is achieved. The proposed BGR circuit is fabricated in a 0.18-μm} CMOS process with an active area of 0.256 mm2 and a max power consumption of 1.35 mW. A minimum TC of 0.706 ppm/°C from 25°C to 125 °C is achieved after an 8-bit resistance trimming. The line sensitivity is 0.0146%/V operating from 3.2 V to 3.7 V. The BGR achieves a power supply rejection (PSR) of-63.4 dB and a noise spectrum density of 0.92 μ VlHz at 10 Hz.

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KW - High-order temperature compensation

KW - Temperature coefficient

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JF - IEEE Transactions on Circuits and Systems I: Regular Papers

IS - 4

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A Sub-1/°C Bandgap Voltage Reference with High-Order Temperature Compensation in 0.18-μm CMOS Process

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Keywords

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